机译:使用宽带隙材料生产透明电极的通用方法
School of Electrical Engineering Korea University Anam-dong 5-ga, Seongbuk-gu, Seoul, 136-701, Korea;
School of Electrical Engineering Korea University Anam-dong 5-ga, Seongbuk-gu, Seoul, 136-701, Korea;
School of Electrical Engineering Korea University Anam-dong 5-ga, Seongbuk-gu, Seoul, 136-701, Korea;
School of Electrical Engineering Korea University Anam-dong 5-ga, Seongbuk-gu, Seoul, 136-701, Korea;
Materals &. Components Lab. LG Advanced Research Institute LG Electronics, Baumoe-ro 38, Seocho-gu, Seoul,137-724, Republic of Korea;
Department of Electrical Computer, and Systems Engineering Rensselaer Polytechnic Institute Troy, NY, 12180, USA;
Department of Electrical Computer, and Systems Engineering Rensselaer Polytechnic Institute Troy, NY, 12180, USA;
School of Electrical Engineering Korea University Anam-dong 5-ga, Seongbuk-gu, Seoul, 136-701, Korea;
机译:使用宽带隙有机半导体和多层透明电极的高透明薄膜晶体管
机译:使用宽带隙有机半导体和多层透明电极的高透明薄膜晶体管
机译:寻求低成本的透明电极材料和方法
机译:不同方法生产的固体材料薄膜结构形成的比较分析
机译:用于有机光伏的透明电极和新型缓冲层材料
机译:使用导电灯丝制造宽带隙透明电极:垂直型GaN LED的性能突破
机译:使用宽带隙有机半导体和多层透明电极高度透明的薄膜晶体管