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Rewritable, Moldable, and Flexible Sticker-Type Organic Memory on Arbitrary Substrates

机译:任意基材上的可重写,可塑和柔性不干胶标签式有机存储器

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摘要

Fabrication of functional devices on arbitrary non-conventional substrates has significant advantages for broadening devices applications and the development of soft electronic systems such as flexible, stretchable, wearable, and epidermal electronic modules. Information storage device is one of crucial electronic elements in modern digital circuitries. Herein, a re-writable, transferable, and flexible sticker-type organic memory on universal substrates is demonstrated through a facile and cost-effective one-step strategy. The organic memory sticker based on the graphene electrode grown by chemical vapor deposition consists of a blending composite of polymer (poly (methyl methacrylate) (PMMA):poly (3-hexylthiophene) (P3HT) in chlorobenzene (CB) fabricated by mature solution processes and facilities. By combining with the mechanical elastic of organic material and graphene electrode, the sticker-type organic memory can be easily tagged on non-planar or flexible substrates after etching away the supporting metal. Particularly, the new attachable sticker-type memory processes a unique feature of re-programmable capability. It is believed that the universal substrate selectivity of the sticker-type organic memory with re-writable characteristic revealed here may greatly enlarge information storage devices in immense areas and advance the future functional soft circuitries.
机译:在任意非常规基板上制造功能设备,对于扩大设备应用范围和开发软性电子系统(例如柔性,可拉伸,可穿戴和表皮电子模块)具有显着优势。信息存储设备是现代数字电路中至关重要的电子元件之一。本文中,通过一种简便且具有成本效益的单步策略展示了在通用基材上可重写,可转移且灵活的粘贴式有机存储器。通过化学气相沉积法生长的基于石墨烯电极的有机存储标签由聚合物(聚(甲基丙烯酸甲酯)(PMMA):聚(3-己基噻吩)(P3HT)在氯苯(CB)中))的混合复合物组成,该溶液是通过成熟溶液法制备的通过结合有机材料的机械弹性和石墨烯电极,可以在蚀刻掉支撑金属后轻松地在非平面或柔性基板上粘贴标签型有机存储,特别是新型可粘贴标签型存储工艺。相信这里揭示的具有可重写特性的粘贴型有机存储器的通用基板选择性可以极大地扩大广阔领域中的信息存储设备,并推进未来的功能软电路。

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  • 来源
    《Advanced Functional Materials》 |2014年第10期|1430-1438|共9页
  • 作者单位

    Department of Physics National Taiwan University No. 1, Sec. 4, Roosevelt Road, Taipei, 106, Taiwan,Republic of China;

    Graduate Institute of Applied Physics National Taiwan University No. 1, Sec. 4, Roosevelt Road, Taipei, 106, Taiwan, Republic of China;

    Graduate Institute of Electronics Engineering National Taiwan University No. 1, Sec. 4, Roosevelt Road, Taipei, 106, Taiwan, Republic of China,Institute of Optoelectronic Sciences National Taiwan Ocean University No.2, Pei-Ning Road, Keelung, 224, Taiwan, Republic of China;

    Institute of Optoelectronic Sciences National Taiwan Ocean University No.2, Pei-Ning Road, Keelung, 224, Taiwan, Republic of China;

    Graduate Institute of Opto-Mechatronics National Chung-Cheng University No. 168, Sec. 1, Daxue Rd., Minxiong Township, Chiayi County, 621, Taiwan, Republic of China;

    Graduate Institute of Electronics Engineering National Taiwan University No. 1, Sec. 4, Roosevelt Road, Taipei, 106, Taiwan, Republic of China;

    Department of Physics National Taiwan University No. 1, Sec. 4, Roosevelt Road, Taipei, 106, Taiwan,Republic of China,Center for Emerging Material and Advanced Devices National Taiwan University No. 1, Sec. 4, Roosevelt Road, Taipei, 106, Taiwan, Republic of China;

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