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Asymmetrical Triboelectric Nanogenerator with Controllable Direct Electrostatic Discharge

机译:可控直接静电放电的不对称摩擦电纳米发电机

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摘要

This paper presents a novel asymmetrical triboelectric nanogenerator (A-TENG) to produce, detect, and analyze contact electrification and electrostatic discharge (ESD) in the atmosphere. Thanks to the asymmetrical structures, the direct and continuous ESD phenomenon without any external electronic circuits is, for the first time, discovered by our experiments in A-TENG. Different from traditional contact-mode TENG, asymmetrical contact pairs introduce an unstable state, which causes a continuous surface charge increase and eventually the air breakdown. The ESD phenomena have been simultaneously detected and confirmed by a low-dark-current photoelectric detector. Four different steps have been summarized to describe irregular ESD transition processes before their stable state. At the same time, the frequency and efficiency of ESD have been generally regulated and controlled by systematically investigating several key influence factors (contact materials, contact pressure, tilted angle, surface morphology, etc.). This asymmetrical structure has proved TENG as powerful and real-time analytical equipment to explore fundamentals of contact electrification and ESD. Meanwhile, three necessary premises for ESD in TENG can be selectively avoided for the improvement of the stability of TENG.
机译:本文提出了一种新型的不对称摩擦电纳米发电机(A-TENG),用于产生,检测和分析大气中的接触带电和静电放电(ESD)。由于采用非对称结构,我们在A-TENG的实验中首次发现了没有任何外部电子电路的直接和连续ESD现象。与传统的接触模式TENG不同,不对称接触对引入不稳定状态,这会导致连续的表面电荷增加,并最终导致空气击穿。 ESD现象已由低暗电流光电检测器同时检测和确认。总结了四个不同的步骤来描述不规则ESD过渡过程在其稳定状态之前的过程。同时,一般通过系统地研究几个关键影响因素(接触材料,接触压力,倾斜角度,表面形态等)来调节和控制ESD的频率和效率。这种不对称的结构已证明TENG是强大的实时分析设备,可用于探索接触带电和ESD的基础知识。同时,可以有选择地避免TENG中ESD的三个必要前提,以提高TENG的稳定性。

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  • 来源
    《Advanced Functional Materials》 |2016年第30期|5524-5533|共10页
  • 作者单位

    Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Inst Microelect, Beijing 100871, Peoples R China;

    Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Inst Microelect, Beijing 100871, Peoples R China;

    Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Inst Microelect, Beijing 100871, Peoples R China;

    Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Inst Microelect, Beijing 100871, Peoples R China;

    Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Inst Microelect, Beijing 100871, Peoples R China;

    Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Inst Microelect, Beijing 100871, Peoples R China;

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