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Functionalization of Graphene Oxide Films with Au and MoO_x Nanoparticles as Efficient p-Contact Electrodes for Inverted Planar Perovskite Solar Cells

机译:具有Au和MoO_x纳米粒子的氧化石墨烯薄膜作为反相平面钙钛矿太阳能电池高效p接触电极的功能化

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摘要

A graphene oxide (GO) film is functionalized with metal (Au) and metal-oxide (MoOx) nanoparticles (NPs) as a hole-extraction layer for high-performance inverted planar-heterojunction perovskite solar cells (PSCs). These NPs can increase the work function of GO, which is confirmed with X-ray photoelectron spectra, Kelvin probe force microscopy, and ultraviolet photoelectron spectra measurements. The down-shifts of work functions lead to a decreased level of potential energy and hence increased V-oc of the PSC devices. Although the GO-AuNP film shows rapid hole extraction and increased V-oc, a J(sc) improvement is not observed because of localization of the extracted holes inside the AuNP that leads to rapid charge recombination, which is confirmed with transient photoelectric measurements. The power conversion efficiency (PCE) of the GO-AuNP device attains 14.6%, which is comparable with that of the GO-based device (14.4%). In contrast, the rapid hole extraction from perovskite to the GO-MoOx layer does not cause trapping of holes and delocalization of holes in the GO film accelerates rapid charge transfer to the indium tin oxide substrate; charge recombination in the perovskite/GO-MoOx interface is hence significantly retarded. The GO-MoOx device consequently shows significantly enhanced V-oc and J(sc), for which its device performance attains PCE of 16.7% with great reproducibility and enduring stability.
机译:氧化石墨烯(GO)膜用金属(Au)和金属氧化物(MoOx)纳米颗粒(NPs)进行功能化,作为高性能倒置平面异质结钙钛矿太阳能电池(PSC)的空穴提取层。这些NP可以增加GO的功函数,这可以通过X射线光电子能谱,开尔文探针力显微镜和紫外光电子能谱测量得到证实。功函数的下移导致势能水平降低,因此PSC设备的V-oc增大。尽管GO-AuNP膜显示出快速的空穴提取并增加了V-oc,但由于在AuNP内提取的空穴位于局部区域,导致电荷快速复合,因此未观察到J(sc)改善,这已通过瞬态光电测量得到了证实。 GO-AuNP设备的功率转换效率(PCE)达到14.6%,与基于GO的设备的功率转换效率(14.4%)相当。相反,从钙钛矿到GO-MoOx层的快速空穴提取不会引起空穴的俘获,并且GO膜中空穴的离域加速了电荷向铟锡氧化物衬底的快速转移。因此,钙钛矿/ GO-MoOx界面中的电荷重组显着受阻。因此,GO-MoOx器件的V-oc和J(sc)显着提高,其器件性能可达到16.7%的PCE,并具有出色的可重复性和持久的稳定性。

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