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机译:具有固有Nb空位的18电子Nb_(0.8)CoSb半霍斯勒化合物的增强的热电性能
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;
Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA;
Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA;
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China;
half-Heusler; NbCoSb; nonstoichiometry; thermoelectric materials; vacancies;
机译:低导热率和有希望的(X)COSB(A = V,NB或TA)半空间的热电性能,具有固有的空位
机译:通过相分离增强p型半霍斯勒(Ti / Zr / Hf)CoSb_(0.8)Sn_(0.2)系统中的热电性能
机译:通过纳米结构增强p型Nb_(0.1)FESB(0.1)FESB(0.1)FESB半风素化合物的优选优异
机译:增强HF掺杂半口腔复合NBFESB的热电性能
机译:半导体和半金属半霍斯勒化合物的输运性质和热电性质。
机译:通过Sc取代实现具有增强的热电性能的p型NbCoSn半霍斯勒化合物
机译:具有固有空位的AxcOSB(A = V,NB或TA)半空间的低导热性和有希望的热电性能