Hollow Spherical Nanoshell Arrays of 2D Layered Semiconductor for High-Performance Photodetector Device

摘要

Well-defined hollow spherical nanoshell arrays of 2D transitional metal dichalcogenide (TMDC) nanomaterials for MoSe2 and MoS2 are grown via chemical vapor deposition technique for the first time. The hollow sphere arrays display the uniform dimensions of approximate to 450 nm with the shell thickness of approximate to 10 nm. The unique hollow sphere architecture with increased active surface area is forecasted to supply more efficient route to improve light-harvesting efficiency through repeated light reflection and scattering inside the hollow structure without decay of response and recovery speed, because exceptional "SP-SP" junction barriers conducting mechanism can facilitate carriers tunneling and transport during the electron transfer procedure within the present particular structure. The MoSe2 hollow sphere photodetector exhibits an outstanding responsivity (8.9 A W-1), which is tenfold higher than that for MoSe2 compact film (0.9 A W-1), fast response and recovery speed, and good durability under illumination wavelength of 365 nm. Meanwhile, MoSe2 hollow sphere arrays on flexible polyethylene terephthalate substrates reveal excellent bending stability. Therefore, this research indicates that unique hollow sphere architecture of 2D TMDC materials will be an anticipated avenue for efficient photodetector devices with far-ranging capability.