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Pressurized Alloying Assisted Synthesis of High Quality Antimonene for Capacitive Deionization

机译:加压合金化辅助合成高品质锑烯用于电容去离子

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摘要

Mono-elemental antimonene as a new member of the 2D material family has recently attracted huge attention, whereas the higher chemical activity and narrower interlayer gallery have impinged the quality of product upon exfoliation from the bulk counterpart. To overcome the intrinsic drawbacks, along with the line of the liquid-phase exfoliation (LPE) method, here, a pressurized alloying approach introduces a Li3Sb alloy intermediate at the edge region of bulk beta-phase antimony by pre-lithiation in the presence of n-butyllithium and internal pressure is put forward. A protonation process converts the Li3Sb to gaseous stibine (SbH3) in a liquid solution, enabling an upward buoyancy together with the endothermic opening of the galleries that facilitate the subsequent LPE. As a result, the beta-phase antimony is efficiently exfoliated into antimonene nanosheets with perfect retention of basal plane texture (lateral size of approximate to 3 mu m and thickness of less than 2 nm). Finally, the high-quality antimonene being simply treated with HCl enables great Na+ diffusion along the basal plane to deliver excellent capacitive deionization performance with a salt adsorption capacity of 31.4 mg g(-1) at an ultra-low NaCl concentration (135 mg L-1).
机译:单元素锑作为2D材料家族的新成员,最近引起了巨大的关注,而较高的化学活动和较窄的中间画廊在从散装对应物中剥离时会使产品的质量妨碍了产品的质量。为了克服本质缺点,随着液相去角质(LPE)方法的线,在这里,通过在存在的情况下,加压合金化方法通过预锂化引入散装β相锑的边缘区域的Li3SB合金中间体。提出正丁基锂和内部压力。质子化方法将Li3SB转化为液体溶液中的气态串联(SBH3),使向上浮力与促进随后的LPE的寄热开口一起。结果,β相锑被有效地剥离到锑烯纳米片中,其具有基础平面纹理的完美保留(横向尺寸约为3μm和小于2nm的厚度)。最后,用HCl简单地处理的高质量锑烯能够沿基底平面实现较大的Na +扩散,以在超低的NaCl浓度下以31.4mg g(-1)的盐吸附容量提供优异的电容去离子性能(135mg l -1)。

著录项

  • 来源
    《Advanced Functional Materials》 |2021年第34期|2102766.1-2102766.11|共11页
  • 作者单位

    Nanjing Univ Sci & Technol Coll Mat Sci & Engn MIIT Key Lab Adv Display Mat & Devices Inst Optoelect & Nanomat Nanjing 210094 Peoples R China;

    Nanjing Univ Sci & Technol Coll Mat Sci & Engn MIIT Key Lab Adv Display Mat & Devices Inst Optoelect & Nanomat Nanjing 210094 Peoples R China;

    Nanjing Univ Sci & Technol Coll Mat Sci & Engn MIIT Key Lab Adv Display Mat & Devices Inst Optoelect & Nanomat Nanjing 210094 Peoples R China;

    Nanjing Univ Sci & Technol Coll Mat Sci & Engn MIIT Key Lab Adv Display Mat & Devices Inst Optoelect & Nanomat Nanjing 210094 Peoples R China;

    Nanjing Univ Sci & Technol Coll Mat Sci & Engn MIIT Key Lab Adv Display Mat & Devices Inst Optoelect & Nanomat Nanjing 210094 Peoples R China;

    Nanjing Univ Sci & Technol Coll Mat Sci & Engn MIIT Key Lab Adv Display Mat & Devices Inst Optoelect & Nanomat Nanjing 210094 Peoples R China;

    Nanjing Univ Sci & Technol Coll Mat Sci & Engn MIIT Key Lab Adv Display Mat & Devices Inst Optoelect & Nanomat Nanjing 210094 Peoples R China;

    Nanjing Univ Sci & Technol Coll Mat Sci & Engn MIIT Key Lab Adv Display Mat & Devices Inst Optoelect & Nanomat Nanjing 210094 Peoples R China;

    Nanjing Univ Sci & Technol Coll Mat Sci & Engn MIIT Key Lab Adv Display Mat & Devices Inst Optoelect & Nanomat Nanjing 210094 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    alloys; capacitive deionization; high quality antimonene;

    机译:合金;电容去离子;高品质的锑烯;

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