机译:通过替代NB掺杂调节单层过渡金属二甲基甲基化物的电子结构
Tsinghua Univ Shenzhen Geim Graphene Ctr Tsinghua Berkeley Shenzhen Inst Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;
Tsinghua Univ Shenzhen Geim Graphene Ctr Tsinghua Berkeley Shenzhen Inst Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;
Tsinghua Univ Shenzhen Geim Graphene Ctr Tsinghua Berkeley Shenzhen Inst Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;
Tsinghua Univ Shenzhen Geim Graphene Ctr Tsinghua Berkeley Shenzhen Inst Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;
Tsinghua Univ Shenzhen Geim Graphene Ctr Tsinghua Berkeley Shenzhen Inst Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;
Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China;
Tsinghua Univ Shenzhen Geim Graphene Ctr Tsinghua Berkeley Shenzhen Inst Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;
Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China;
Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China;
Tsinghua Univ Shenzhen Geim Graphene Ctr Tsinghua Berkeley Shenzhen Inst Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;
Tsinghua Univ Shenzhen Geim Graphene Ctr Tsinghua Berkeley Shenzhen Inst Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China;
Tsinghua Univ Shenzhen Geim Graphene Ctr Tsinghua Berkeley Shenzhen Inst Shenzhen 518055 Peoples R China|Tsinghua Univ Tsinghua Shenzhen Int Grad Sch Shenzhen 518055 Peoples R China|Chinese Acad Sci Inst Met Res Shenyang Natl Lab Mat Sci Shenyang 110016 Peoples R China;
2D materials; bandgap; doping; electronic structure; TMDCs;
机译:通过界面工程调节二维过渡金属二甲基甲基(MOS2,TAS2,NBS2)单层的电子结构和面内活性
机译:钒嵌入和替代掺杂的过渡金属二甲基化物Tixvyse2的电子结构
机译:通过过渡金属的替代掺杂来调制MoS2单层板的电子,磁性和化学性质
机译:单层过渡金属二卤化金属化物的金属接触取代掺杂:基于密度泛函理论的研究
机译:通过偏振分辨光谱探测过渡金属二甲胺化物单层和异质结构
机译:确定替代氧作为单层过渡金属二卤化金属中的高产点缺陷
机译:通过界面工程调节二维过渡金属二甲基甲基(MOS2,TAS2,NBS2)单层的电子结构和面内活性