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Photon-Memristive System for Logic Calculation and Nonvolatile Photonic Storage

机译:逻辑计算和非易失性光子储存的光子 - 忆内系统

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摘要

Memristor-based architectures have shown great potential for developing future computing systems beyond the era of von Neumann and Moore's law. However, the monotonous electrical input for dynamic resistance regulation limits the developments of memristors. Here, a concept of a photon-memristive system, which realizes memristance depending on number of photons (optical inputs), is proposed. A detailed theoretical derivation is performed and the memristive characteristics, as stimulated by the optical inputs based on a hybrid system, consisting of a low-dimension photoelectric semiconductor and a ferroelectric substrate are determined. The photon-memristive system is also suitable for nonvolatile photonic memory since it possesses three or more-bit data storage, desirable resistance-change space, and an ON/OFF ratio of nearly 10(7). The integrated circuit based on several photon-memristive systems also realizes available photon-triggered in-memory computing. The photon-memristive system expands the definition of memristors and emerges as a new data storage cell for future photonic neuromorphic computational architectures.
机译:基于Memristor的架构表明,在冯诺曼和摩尔定律的时代,发展未来计算系统的巨大潜力。然而,用于动态电阻调节的单调电气输入限制了忆阻器的发展。这里,提出了根据光子数量(光输入)的光子 - 忆内系统的概念。确定了一种详细的理论推导,并且确定由基于混合系统的光学输入刺激的存储器特性,由由低尺寸光电半导体和铁电基板组成。光子 - 忆内系统也适用于非易失性光子存储器,因为它具有三个或更多位数据存储,所需的电阻变化空间,以及近10(7)的开/关比。基于多个光子 - 忆内系统的集成电路还实现了可用的光子触发的内存计算。光子 - 忆内系统扩展了回忆镜的定义,并作为未来光子神经形态计算架构的新数据存储单元格出现。

著录项

  • 来源
    《Advanced Functional Materials》 |2020年第34期|2002945.1-2002945.9|共9页
  • 作者单位

    Chinese Acad Sci Beijing Inst Nanoenergy & Nanosyst Beijing Key Lab Micronano Energy & Sensor CAS Ctr Excellence Nanosci Beijing 100083 Peoples R China|Univ Chinese Acad Sci Coll Nanosci & Technol Beijing 100049 Peoples R China;

    Univ Elect Sci & Technol China State Key Lab Elect Thin Films & Integrated Devic Chengdu 610054 Peoples R China;

    Univ Elect Sci & Technol China State Key Lab Elect Thin Films & Integrated Devic Chengdu 610054 Peoples R China;

    Chinese Acad Sci Beijing Inst Nanoenergy & Nanosyst Beijing Key Lab Micronano Energy & Sensor CAS Ctr Excellence Nanosci Beijing 100083 Peoples R China|Univ Chinese Acad Sci Coll Nanosci & Technol Beijing 100049 Peoples R China;

    Chinese Acad Sci Beijing Inst Nanoenergy & Nanosyst Beijing Key Lab Micronano Energy & Sensor CAS Ctr Excellence Nanosci Beijing 100083 Peoples R China|Univ Chinese Acad Sci Coll Nanosci & Technol Beijing 100049 Peoples R China|Georgia Inst Technol Sch Mat Sci & Engn Atlanta GA 30332 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    logic calculations; MoS2-PZT; photonic storage; photon-memristive systems; theoretical derivations;

    机译:逻辑计算;MOS2-PZT;光子储存;光子 - 忆内系统;理论衍生;

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