首页> 外文期刊>Advanced Functional Materials >Silicon-Compatible Photodetectors: Trends to Monolithically Integrate Photosensors with Chip Technology
【24h】

Silicon-Compatible Photodetectors: Trends to Monolithically Integrate Photosensors with Chip Technology

机译:硅兼容光电探测器:单片集成光电传感器与芯片技术的趋势

获取原文
获取原文并翻译 | 示例
           

摘要

Encouraged by the increasing requirements of intelligent equipment, silicon integrated circuit-compatible photodetectors that support single-chip photonic-electronic systems have gained considerable progresses. Advanced materials have resulted in enhanced device performance based on traditional photovoltaic effect and photoconductive effect, and novel device designs have catalyzed new working mechanisms combing rapid photoresponse and high responsivity gain. Surprising applications are developed using monolithic photonic-electronic platforms, and the developing integration strategies keep pace with the developing complementary metal-oxide-semiconductor techniques as well as nonsilicon substrates. Here, the recent developments in silicon-compatible photodetectors, both in device advances and their integration routes, are reviewed. Meanwhile, the progresses, challenges, and possible future directions in this field are discussed and concluded.
机译:在智能设备需求不断增长的鼓舞下,支持单芯片光电子系统的硅集成电路兼容光电探测器取得了长足的进步。先进的材料在传统的光电效应和光电导效应的基础上提高了器件的性能,新颖的器件设计催生了将快速的光响应和高响应增益相结合的新工作机制。使用单片光电子平台开发了令人惊讶的应用程序,并且不断发展的集成策略与互补金属氧化物半导体技术以及非硅衬底的发展保持同步。在此,回顾了与硅兼容的光电探测器的最新进展,包括器件的发展及其集成路线。同时,讨论并总结了该领域的进展,挑战和可能的未来方向。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号