机译:平面和微线阵列Si | GaP电极的光电化学行为
Beckman Institute and Kavli Nanoscience Institute Division of Chemistry and Chemical Engineering California Institute of Technology 1200 E. California Blvd Pasadena CA 91125 USA;
Thomas J. Watson Laboratories of Applied Physics California Institute of Technology 1200 E. California Blvd Pasadena CA 91125 USA;
Thomas J. Watson Laboratories of Applied Physics California Institute of Technology 1200 E. California Blvd Pasadena CA 91125 USA;
Thomas J. Watson Laboratories of Applied Physics California Institute of Technology 1200 E. California Blvd Pasadena CA 91125 USA;
Thomas J. Watson Laboratories of Applied Physics California Institute of Technology 1200 E. California Blvd Pasadena CA 91125 USA;
Beckman Institute and Kavli Nanoscience Institute Division of Chemistry and Chemical Engineering California Institute of Technology 1200 E. California Blvd Pasadena CA 91125 USA;
semiconductors; composites; electrodes; electro-optical materials;
机译:使用光电化学外延生长技术(PEEG)在TiO_2电极上沉积金属氧化物以及PbO_2 / TiO_2电极的电化学行为
机译:使用OFHC铜,镍,铝和铌平行平面电极,真空间隙的交流(50 Hz)和直流电击穿以及气压变化在10-9-10-2托范围内
机译:P-Gap电极上水溶液中的光化学还原二氧化碳-相敏检测的交流阻抗研究
机译:PL / TiO {Sub} 2纳米复合薄膜电极的光电化学行为通过PLD /尖峰组合系统制备
机译:用于光电化学水分解的铁基半导体电极的电化学合成
机译:通过在两个共面的铟锡氧化物电极上进行原位电穿孔检查间隙连接细胞间通讯
机译:TiO2 / Ti纳米管电极的制备及其在NaCl溶液中的光电化学行为