机译:硒化过程中合金层的临时阻挡效应:为高效Cu2ZnSnSe4太阳能电池量身定制MoSe2的厚度
Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin P.R. China;
Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin P.R. China;
Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin P.R. China;
Department of Physics Sogang University Seoul Korea;
Department of Physics Sogang University Seoul Korea;
The MOE Key Laboratory of Weak-Light Nonlinear Photonics School of Physics Nankai University Tianjin P.R. China;
Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin P.R. China;
Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin P.R. China;
alloys; annealing process; CZTSe; MoSe2; solar cells; series resistance;
机译:太阳能电池:硒化过程中合金层的暂时阻挡作用:针对高效Cu2ZnSnSe4太阳能电池量身定制MoSe2的厚度(Adv。Energy Mater。9/2015)
机译:控制Cu2ZnSnSe4薄膜太阳能电池中的MoSe2界面层:8.9%的功率转换效率和TiN扩散阻挡层
机译:通过层状金属前体膜的多步硒化制备Cu2ZnSnSe4太阳能电池
机译:通过软预合金化处理高性能CZTSE和CZTSSE太阳能电池MOSE2层的厚度
机译:两步法制备Cu2ZnSnSe4薄膜太阳能电池。
机译:通过电沉积Cu / Sn / Zn堆叠层然后在低Se压力下硒化制备的CZTSe太阳能电池
机译:电沉积堆叠二元合金层的硒化形成Cu2ZnSnSe4薄膜