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Influence of Charge Transport and Defects on the Performance of Planar and Mesostructured Perovskite Solar Cells

机译:电荷传输和缺陷对平面和介孔钙钛矿太阳能电池性能的影响

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摘要

Photoinduced charge selective carrier extraction by linearly increasing voltage technique allows straightforward assessment of charge transport properties within planar and mesostructured perovskite solar cells with respect to light intensity and signal delay time. Charge sensitive device architecture is realized through implementation of insulating layer between the anode or cathode to prevent extraction of unwanted type of carriers. Resulting behavior of comparatively efficient mesoporous and planar solar cells exhibits well balanced charge transport with slight dependence of charge mobility on applied laser pulse fluence, for given pulse delay times. Very similar charge carrier mobilities are present within mesoporous devices, whereas holes trail approximately half an order of magnitude behind electrons in planar structured specimens. Moreover, dispersive transport is identified in the electron selective devices with titanium oxide electron transporter, suggesting considerable presence of trapping states at the perovskite interface, whereas no such behavior characterizes planar samples. Variation in delay time between laser pulse and extraction ramp only affects initial charge concentration present within the device, while transient outlay remains unchanged, indicating absence of film charging effect.
机译:通过线性增加电压技术提取光诱导的电荷选择性载流子,可以相对于光强度和信号延迟时间直接评估平面钙钛矿型和钙钛矿型太阳能电池内的电荷传输性质。通过在阳极或阴极之间实施绝缘层以防止提取有害类型的载流子,可以实现电荷敏感器件的体系结构。对于给定的脉冲延迟时间,相对高效的介孔和平面太阳能电池的最终性能表现出良好的平衡电荷传输,并且电荷迁移率对所施加的激光脉冲通量的依赖性很小。介孔器件中存在非常相似的电荷载流子迁移率,而空穴在平面结构化样品中落后于电子,大约落后半个数量级。此外,在具有钛氧化物电子传输器的电子选择装置中发现了分散传输,这表明钙钛矿界面处大量存在俘获态,而没有这种行为表征平面样品。激光脉冲和提取斜波之间的延迟时间变化仅影响器件内存在的初始电荷浓度,而瞬态支出保持不变,表明没有膜电荷效应。

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  • 来源
    《Advanced energy materials 》 |2017年第13期| 1602610.1-1602610.7| 共7页
  • 作者单位

    Natl Univ Singapore, Dept Mech Engn, Singapore 117576, Singapore|Natl Univ Singapore, Ctr Nanofibers & Nanotechnol NUSCNN, Singapore 117576, Singapore|ASTAR, IMRE, 08-03,2 Fusionopolis Way, Singapore 138634, Singapore;

    Natl Univ Singapore, Dept Mech Engn, Singapore 117576, Singapore|Natl Univ Singapore, Ctr Nanofibers & Nanotechnol NUSCNN, Singapore 117576, Singapore|ASTAR, IMRE, 08-03,2 Fusionopolis Way, Singapore 138634, Singapore;

    ASTAR, IMRE, 08-03,2 Fusionopolis Way, Singapore 138634, Singapore;

    Natl Univ Singapore, Dept Mech Engn, Singapore 117576, Singapore|Natl Univ Singapore, Ctr Nanofibers & Nanotechnol NUSCNN, Singapore 117576, Singapore;

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