ANALYTICAL MODELING OF THE RECOMBINATION CURRENT IN THE BASE-EMITTER SPACE CHARGE REGION OF HETEROJUNCTION BIPOLAR TRANSISTORS

摘要

An analytical modeling of the recombination current in the base-emitter space charge region of heterojunction bipolar transistors is derived. The recombination rates as functions of distance in the space charge region are calculated for different base doping concentrations. The relations between the space charge recombination current and the applied voltage have been determined.