Full Field Nanoimprint on Mask Aligners Using Substrate Conformal Imprint Lithography Technique

摘要

Nowadays, the development of integrated circuit (IC) industry and scientific researches rely more and more on the nanofabrication technologies. The resolution limits of optical lithography are very real even with a number of "optical tricks" [1] at work. E-beam lithography (EBL) provides excellent resolution down to several nanometers. However, due to its scanning exposure principle the throughput of EBL is too low for mass production or even for research that requires multiple identical samples e.g. (bio)sensors.