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首页> 外文期刊>Acta Physica Polonica >Structural and Optical Behaviour of Ni Doped CdS Nanoparticles Synthesized by Chemical Co-Precipitation Method
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Structural and Optical Behaviour of Ni Doped CdS Nanoparticles Synthesized by Chemical Co-Precipitation Method

机译:化学共沉淀法合成Ni掺杂CdS纳米粒子的结构和光学行为

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摘要

Pure and Ni (2 at,%) doped cadmium sulfide (CdS) nanoparticles have been synthesized by chemical co-precipitation method at room temperature. Effect of Ni doping on CdS compound semiconductors has been analyzed using X-ray diffractometer, transmission electron microscope, energy dispersive spectroscopy, Raman and optical absorption studies. X-ray diffraction study confirmed the structure of the obtained nanoparticles to be single-phase zinc blende with the diffractions from (111), (220) and (311) planes. Energy dispersive spectroscopy study confirmed the presence of Ni in the CdS lattice. The average particle size obtained from the transmission electron microscopy studies are in agreement with the crystallite size calculated from X-ray diffraction data. The optical studies exhibited a clear red shift of absorption edge as a function of Ni doping.
机译:在室温下通过化学共沉淀法合成了纯的和掺杂Ni(2 at%)的硫化镉(CdS)纳米颗粒。使用X射线衍射仪,透射电子显微镜,能量色散谱,拉曼光谱和光吸收研究分析了Ni掺杂对CdS化合物半导体的影响。 X射线衍射研究证实了所获得的纳米颗粒的结构是单相锌共混物,具有来自(111),(220)和(311)面的衍射。能量色散光谱研究证实了CdS晶格中存在Ni。从透射电子显微镜研究获得的平均粒度与根据X射线衍射数据计算的微晶尺寸一致。光学研究显示出吸收边缘的明显红移是Ni掺杂的函数。

著录项

  • 来源
    《Acta Physica Polonica 》 |2011年第ptaa期| p.52-54| 共3页
  • 作者单位

    Department of Physics, Sri Venkateswara University, Tirupati - 517 502, India;

    Department of Physics, Sri Venkateswara University, Tirupati - 517 502, India;

    Department of Physics, Sri Venkateswara University, Tirupati - 517 502, India;

    Department of Physics, Sri Venkateswara University, Tirupati - 517 502, India;

    CENIMAT/I3N, Departemento de Ciencia dos Materiais, Faculdade de Cienciase Technolgia, FCT Universidade Nova de Lisboa and CEMOP/UNINOVA, 2829-516 Caparica, Portugal;

    CENIMAT/I3N, Departemento de Ciencia dos Materiais, Faculdade de Cienciase Technolgia, FCT Universidade Nova de Lisboa and CEMOP/UNINOVA, 2829-516 Caparica, Portugal;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    defects and impurities in crystals; microstructure; Ⅱ-Ⅵ semiconductors; nanocrystals and nanoparticles;

    机译:晶体中的缺陷和杂质;微观结构;Ⅱ-Ⅵ族半导体;纳米晶体和纳米粒子;

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