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Pulsed Laser Interference Patterning of Metallic Thin Films

机译:金属薄膜的脉冲激光干涉图案

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Pulsed laser interference is applied to metallic and semiconductor thin films in the thickness range of 40-100 nm. At intensities which induce local melting we can observe local retraction of the molten material towards the unmolten areas due to dewetting. Thus micropatterning of surface gets feasible. Although this dewetting induced retraction should be a common behaviour of metals on oxide surfaces, two groups of materials can be distinguished. In the first group the former molten areas get completely blank of metal while in the second group a material droplet remains in the center of the molten area. We show that this behaviour can be attributed to a distinctly different way of liquid movement upon local melting.
机译:脉冲激光干涉作用于厚度为40-100 nm的金属和半导体薄膜。在引起局部熔化的强度下,我们可以观察到由于去湿而使熔融材料向未熔化区域局部回缩。因此,表面的微图案化是可行的。尽管这种去湿引起的缩回应该是金属在氧化物表面上的普遍行为,但是可以区分两组材料。在第一组中,先前的熔融区域完全变成金属,而在第二组中,材料滴保留在熔融区域的中心。我们表明,这种行为可以归因于局部熔化时液体运动的明显不同。

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