Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films

摘要

Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences 10~(16) and 2 × 10~(16) cm~(-2). As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.