Grain boundary structure, chemical composition, and bonding state in superplastic SiO_2- doped TZP and undoped TZP were investigated by high resolution electron microscopy (HREM), energy dispersive X-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS) using a field emeission type transmission electron microscope (FE-TEM). No amorphous phase was observed at any grain boundaries in either SiO_2-doped TZP or undoped TZP. Yttrium ions segregated over a with of 4-6nm at grain boundaries in both materials, and silicon ions segregated over a width of 5-8nm at grain boundaries in SiO_2-doped TZP.
展开▼
