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Theoretical description of halogen bonding – an insight based on the natural orbitals for chemical valence combined with the extended-transition-state method (ETS-NOCV)

机译:卤素键的理论描述–基于化学价的自然轨道与扩展过渡态方法(ETS-NOCV)的结合

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摘要

In the present study we have characterized the halogen bonding in selected molecules H3N–ICF3 (>1-NH>3), (PH3)2C–ICF3 (>1-CPH>3), C3H7Br–(IN2H2C3)2C6H4 (>2-Br), H2–(IN2H2C3)2C6H4 (>2-H>2>) and Cl–(IC6F5)2C7H10N2O5 (>3-Cl), containing from one halogen bond (>1-NH>3, >1-CPH>3) up to four connections in >3-Cl (the two Cl–HN and two Cl–I), based on recently proposed ETS-NOCV analysis. It was found based on the NOCV-deformation density components that the halogen bonding C–X>…B (X-halogen atom, B-Lewis base), contains a large degree of covalent contribution (the charge transfer to X>…B inter-atomic region) supported further by the electron donation from base atom B to the empty σ*(C–X) orbital. Such charge transfers can be of similar importance compared to the electrostatic stabilization. Further, the covalent part of halogen bonding is due to the presence of σ-hole at outer part of halogen atom (X). ETS-NOCV approach allowed to visualize formation of the σ-hole at iodine atom of CF3I molecule. It has also been demonstrated that strongly electrophilic halogen bond donor, [C6H4(C3H2N2I)2][OTf]2, can activate chemically inert isopropyl bromide (>2-Br) moiety via formation of Br–I bonding and bind the hydrogen molecule (>2-H>2). Finally, ETS-NOCV analysis performed for >3-Cl leads to the conclusion that, in terms of the orbital-interaction component, the strength of halogen (Cl–I) bond is roughly three times more important than the hydrogen bonding (Cl–HN).>FigureETS-NOCV reprezentation of σ-hole at iodine together with the molecular electrostatic potential picture
机译:在本研究中,我们表征了所选分子H3N–ICF3(> 1-NH > 3 ),(PH3)2C–ICF3(> 1-CPH > 3 ),C3H7Br–(IN2H2C3)2C6H4(> 2-Br ),H2–(IN 2 H 2 C 3 2 C 6 H 4 (> 2-H > 2 >)和Cl–(IC 6 F 5 2 C 7 H 10 N 2 O 5 (> 3-Cl)< / strong>,包含一个卤素键(> 1-NH > 3 ,> 1-CPH <基于最近提出的ETS-NOCV分析,在> 3-Cl 中最多有四个连接(两个Cl–HN和两个Cl–I)(strong> 3 )。根据NOCV形变密度成分发现,卤素键C–X >… B(X卤素原子,B-刘易斯碱)含有很大程度的卤素。从基原子B到空的σ*(C–X)的电子捐赠进一步支持了共价贡献(电荷转移到X > ... B原子间区域)的作用轨道。与静电稳定相比,这种电荷转移可能具有相似的重要性。此外,卤素键的共价部分是由于在卤素原子(X)的外部存在σ孔。 ETS-NOCV方法可以观察到CF 3 I分子碘原子上σ孔的形成。还证明了强亲电卤素键供体[C 6 H 4 (C 3 H 2 N 2 I) 2 ] [OTf] 2 ,可以活化化学惰性的异丙基溴(> 2-Br )通过形成Br–I键形成氢键部分并结合氢分子(> 2-H > 2 )。最后,对> 3-Cl 进行的ETS-NOCV分析得出的结论是,就轨道相互作用成分而言,卤素(Cl–I)键的强度大约是其重要性的三倍。氢键(Cl–HN)。<!-fig ft0-> <!-fig @ position =“ anchor” mode = article f4-> <!-fig mode =“ anchored” f5-> >图<!-无花果/图形|无花果/图形/图形模式=“锚定” m1-> <!-标题a7->在碘上ETS-NOCV表示σ孔以及分子静电潜在图片

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