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A 1.15 μW 200 kS/s 10-b Monotonic SAR ADC Using Dual On-Chip Calibrations and Accuracy Enhancement Techniques

机译:采用双重片内校准和精度增强技术的1.15μW200 kS / s 10-b单调SAR ADC

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摘要

Herein, we present an energy efficient successive-approximation-register (SAR) analog-to-digital converter (ADC) featuring on-chip dual calibration and various accuracy-enhancement techniques. The dual calibration technique is realized in an energy and area-efficient manner for comparator offset calibration (COC) and digital-to-analog converter (DAC) capacitor mismatch calibration. The calibration of common-mode (CM) dependent comparator offset is performed without using separate circuit blocks by reusing the DAC for generating calibration signals. The calibration of the DAC mismatch is efficiently performed by reusing the comparator for delay-based mismatch detection. For accuracy enhancement, we propose new circuit techniques for a comparator, a sampling switch, and a DAC capacitor. An improved dynamic latched comparator is proposed with kick-back suppression and CM dependent offset calibration. An accuracy-enhanced bootstrap sampling switch suppresses the leakage-induced error <180 μV and the sampling error <150 μV. The energy-efficient monotonic switching technique is effectively combined with thermometer coding, which reduces the settling error in the DAC. The ADC is realized using a 0.18 μm complementary metal–oxide–semiconductor (CMOS) process in an area of 0.28 mm2. At the sampling rate fS = 9 kS/s, the proposed ADC achieves a signal-to-noise and distortion ratio (SNDR) of 55.5 dB and a spurious-free dynamic range (SFDR) of 70.6 dB. The proposed dual calibration technique improves the SFDR by 12.7 dB. Consuming 1.15 μW at fS = 200 kS/s, the ADC achieves an SNDR of 55.9 dB and an SFDR of 60.3 dB with a figure-of-merit of 11.4 fJ/conversion-step.
机译:本文中,我们介绍了一种具有高能效的逐次逼近寄存器(SAR)模数转换器(ADC),该芯片具有片上双重校准和各种精度增强技术。双重校准技术以节省能源和面积的方式实现,用于比较器失调校准(COC)和数模转换器(DAC)电容器失配校准。通过重新使用DAC来生成校准信号,无需使用单独的电路模块即可执行与共模(CM)相关的比较器失调的校准。通过将比较器重新用于基于延迟的失配检测,可以有效地执行DAC失配的校准。为了提高精度,我们为比较器,采样开关和DAC电容器提出了新的电路技术。提出了一种改进的动态锁存比较器,具有反冲抑制和依赖于CM的失调校准。精度增强的自举采样开关可抑制泄漏引起的误差<180μV和采样误差<150μV。高效的单调开关技术与温度计编码有效结合,可减少DAC中的建立误差。 ADC采用0.18μm互补金属氧化物半导体(CMOS)工艺实现,面积为0.28 mm 2 。在采样速率fS = 9 kS / s时,拟议的ADC实现55.5 dB的信噪比和失真比(SNDR)和70.6 dB的无杂散动态范围(SFDR)。提出的双重校准技术将SFDR提高了12.7 dB。在fS = 200 kS / s时消耗1.15μW,ADC的SNDR为55.9 dB,SFDR为60.3 dB,品质因数为11.4 fJ /转换步长。

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