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Low Bandgap Donor-Acceptor π-Conjugated Polymers From Diarylcyclopentadienone-Fused Naphthalimides

机译:低带隙供体-受体π共轭聚合物的二芳基环戊二烯酮融合的萘二甲酰亚胺

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摘要

Two novel aromatic imides, diarylcyclopentadienone-fused naphthalimides (BCPONI-2Br and TCPONI-2Br), are designed and synthesized by condensation coupling cyclopentadienone derivatives at the lateral position of naphthalimide skeleton. It has been found that BCPONI-2Br and TCPONI-2Br are highly electron-withdrawing acceptor moieties, which possess broad absorption bands and very low-lying LUMO energy levels, as low as −4.02 eV. On the basis of both building blocks, six low bandgap D-A copolymers (P1–P6) are prepared via Suzuki or Stille coupling reactions. The optical and electrochemical properties of the polymers are fine-tuned by the variations of donors (carbazole, benzodithiophene, and dithienopyrrole) and π-conjugation linkers (thiophene and benzene). All polymers exhibit several attractive photophysical and electrochemical properties, i.e., broad near-infrared (NIR) absorption, deep-lying LUMO levels (between −3.88 and −3.76 eV), and a very small optical bandgap (Egopt) as low as 0.81 eV, which represents the first aromatic diimide-based polymer with an Egopt of <1.0 eV. An investigation of charge carrier transport properties shows that P5 exhibits a moderately high hole mobility of 0.02 cm2 V−1 s−1 in bottom-gate field-effect transistors (FETs) and a typical ambipolar transport behavior in top-gate FETs. The findings suggest that BCPONI-2Br, TCPONI-2Br, and the other similar acceptor units are promising building blocks for novel organic semiconductors with outstanding NIR activity, high electron affinity, and low bandgap, which can be extended to various next-generation optoelectronic devices.
机译:通过在萘二甲酰亚胺骨架的侧向位置缩合偶联环戊二烯酮衍生物,设计和合成了两种新型的芳族酰亚胺,即二芳基环戊二烯酮稠合的萘二甲酰亚胺(BCPONI-2Br和TCPONI-2Br)。已经发现BCPONI-2Br和TCPONI-2Br是高度吸电子的受体部分,其具有宽的吸收带和非常低的LUMO能级,低至-4.02eV。在这两个结构单元的基础上,通过Suzuki或Stille偶联反应制备了六种低带隙D-A共聚物(P1-P6)。聚合物的光学和电化学性质可通过供体(咔唑,苯并二噻吩和二噻吩并吡咯)和π共轭连接体(噻吩和苯)的变化进行微调。所有聚合物均表现出几种吸引人的光物理和电化学特性,即广泛的近红外(NIR)吸收,深层的LUMO水平(在-3.88和-3.76 eV之间)和非常小的光学带隙 E < / mi> g opt 低至0.81 eV,代表第一种基于芳族二酰亚胺的聚合物,其 E g opt <1.0 eV。电荷载流子输运性质的研究表明,P5在底部的空穴迁移率中等,为0.02 cm 2 V -1 s -1 栅极场效应晶体管(FET)和顶栅FET中典型的双极传输行为。研究结果表明,BCPONI-2Br,TCPONI-2Br和其他类似的受体单元是具有出色的近红外活性,高电子亲和力和低带隙的新型有机半导体的有前途的构建基块,可以扩展到各种下一代光电器件。

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