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Characterization of local electrochemical doping of high performance conjugated polymer for photovoltaics using scanning droplet cell microscopy

机译:使用扫描液滴细胞显微镜表征光伏用高性能共轭聚合物的局部电化学掺杂

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摘要

The electrochemical oxidation of a next generation low bandgap high performance photovoltaic material namely poly[4,8-bis-substituted-benzo[1,2-b:4,5-b0]dithiophene-2,6-diyl-alt-4-substituted-thieno[3,4-b] thiophene-2,6-diyl] (PBDTTT-c) thin film was investigated using a scanning droplet cell microscope. Cyclic voltammetry was used for the basic characterization of the oxidation/doping of PBDTTT-c. Application of the different final potentials during the electrochemical study provides a close look to the oxidation kinetics. The electrical properties of both doped and undoped PBDTTT-c were analyzed in situ by electrochemical impedance spectroscopy giving the possibility to correlate the changes in the doping level with the subsequent changes in the resistance and capacitance. As a result one oxidation peak was found during the cyclic voltammetry and in potentiostatic measurements. From Mott–Schottky analysis a donor concentration of 2.3 × 1020 cm−3 and a flat band potential of 1.00 V vs. SHE were found. The oxidation process resulted in an increase of the conductivity by two orders of magnitude reaching a maximum for the oxidized form of 1.4 S cm−1.
机译:下一代低带隙高性能光伏材料,即聚[4,8-双取代-苯并[1,2-b:4,5-b0]二噻吩-2,6-二基-alt-4-使用扫描液滴细胞显微镜研究了取代的噻吩并[3,4-b]噻吩-2,6-二基](PBDTTT-c)薄膜。循环伏安法用于PBDTTT-c的氧化/掺杂的基本表征。在电化学研究过程中应用不同的最终电势可以密切观察氧化动力学。掺杂和未掺杂的PBDTTT-c的电学特性均通过电化学阻抗谱进行了现场分析,从而有可能将掺杂水平的变化与随后电阻和电容的变化联系起来。结果,在循环伏安法和恒电位测量中发现一个氧化峰。根据Mott–Schottky分析,发现供体浓度为2.3×10 20 cm -3 ,相对于SHE的平带电势为1.00V。氧化过程导致电导率增加两个数量级,达到1.4S cm -1 的氧化形式的最大值。

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