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Copper Bromide as an Efficient Solution-Processable Hole TransportLayer for Organic Solar Cells: Effect of Solvents

机译:溴化铜作为一种高效的可处理空穴传输解决方案有机太阳能电池层:溶剂的作用

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摘要

In this work, we report copper bromide (CuBr) as an efficient, inexpensive, and solution-processable hole transport layer (HTL) for organic solar cells (OSCs) for the first time. To examine the effectiveness of the material in general, three different solvents such as acetonitrile (MeCN), dimethyl sulfoxide (DMSO), and dimethylformamide (DMF) are used for solution-processing thin-film deposition of CuBr. CuBr thin films deposited from different solvents show high transparency and no significant difference has been observed in absorption in the visible and near-IR range, whereas a slight difference has been found in the near-UV range by changing the solvents. Furthermore, two most studied combinations of the active layer such as PTB7/PC71BM and PCDTBT:/PC71BM are used for device fabrication with geometry of ITO/CuBr(HTL) active layer/Al. By using CuBr as a HTL in OSCs, the power conversion efficiencies (PCEs) have been achieved to up to 5.16 and 4.72% with PTB7/PC71BM and PCDTBT/PC71BM active layers, respectively. The CuBr film from DMF solvent shows highest PCE as compared to films deposited from DMSO and MeCN solvents.Different solvents used for HTL deposition have a major effect onthe fill factor (FF), while very little difference on open circuitvoltage (Voc) and short circuit current(Jsc) has been observed. It may be mentionedhere that a small difference of device parameters (PCE, FF, Jsc, and Voc) hasbeen observed in the devices using the HTL deposited from DMF andDMSO solvents, whereas a significant difference of the device parametershas been found in devices using the HTL from MeCN solvent.
机译:在这项工作中,我们首次报告了溴化铜(CuBr)作为有机太阳能电池(OSC)的高效,廉价且可溶液处理的空穴传输层(HTL)。通常,要检查该材料的有效性,可以使用三种不同的溶剂(例如乙腈(MeCN),二甲基亚砜(DMSO)和二甲基甲酰胺(DMF))对CuBr进行薄膜沉积。由不同溶剂沉积的CuBr薄膜显示出高透明性,在可见光和近红外范围内的吸收率没有发现显着差异,而通过改变溶剂,在近紫外范围内发现了轻微的差异。此外,有源层的两种研究最多的组合(例如PTB7 / PC71BM和PCDTBT:/ PC71BM)用于具有ITO / CuBr(HTL)有源层/ Al几何形状的器件制造。通过在OSC中使用CuBr作为HTL,PTB7 / PC71BM和PCDTBT / PC71BM有源层的功率转换效率(PCE)分别达到了5.16%和4.72%。与由DMSO和MeCN溶剂沉积的薄膜相比,由DMF溶剂沉积的CuBr薄膜具有最高的PCE。用于HTL沉积的不同溶剂对填充系数(FF),而开路差异很小电压(Voc)和短路电流(Jsc)已被观察到。可能会提到在这里,设备参数(PCE,FF,Jsc和Voc)的差异很小在使用DMF和DMF沉积的HTL的设备中观察到DMSO溶剂,而设备参数有很大差异在使用MeCN溶剂的HTL的设备中已经发现。

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