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Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing

机译:通过离子层沉积对气体感测形成的空间有序纳米氧化锡氧化物纳米复合材料

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摘要

The process of layer-by-layer ionic deposition of tin-tungsten oxide films on smooth silicon substrates and nanoporous anodic alumina matrices has been studied. To achieve the film deposition, solutions containing cationic SnF2 or SnCl2 and anionic Na2WO4 or (NH4)2O·WO3 precursors have been used. The effect of the solution compositions on the films deposition rates, morphology, composition, and properties was investigated. Possible mechanisms of tin-tungsten oxide films deposition into the pores and on the surface of anodic alumina are discussed. The electro-physical and gas-sensitive properties of nanostructured SnxWyOz films have been investigated. The prepared nanocomposites exhibit stable semiconductor properties characterized by high resistance and low temperature coefficient of electrical resistance of about 1.6 × 10−3 K−1. The sensitivity of the SnxWyOz films to 2 and 10 ppm concentrations of ammonia at 523 K was 0.35 and 1.17, respectively. At concentrations of 1 and 2 ppm of nitrogen dioxide, the sensitivity was 0.48 and 1.4, respectively, at a temperature of 473 K. At the temperature of 573 K, the sensitivity of 1.3 was obtained for 100 ppm of ethanol. The prepared nanostructured tin-tungsten oxide films showed promising gas-sensitivity, which makes them a good candidate for the manufacturing of gas sensors with high sensitivity and low power consumption.
机译:研究了逐层氧化锡氧化膜在光滑的硅基衬底和纳米多孔阳极氧化铝基质上的逐层离子沉积的方法。为了实现膜沉积,已经使用含有阳离子SnF2或SnCl2和阴离子Na 2 Or 4或(NH 4)2O·WO3前体的溶液。研究了溶液组合物对薄膜沉积速率,形态,组成和性质的影响。讨论了锡钨膜沉积到孔中和阳极氧化铝表面的可能机制。已经研究了纳米结构的Snxwyoz膜的电物理和气体敏感性。制备的纳米复合材料表现出稳定的半导体性能,其特征在于高电阻和低温的电阻的电阻约1.6×10-3 k-1。 SNXWYOZ薄膜在523k下氨的氨的敏感性分别为0.35和1.17。在1和2ppm的二氧化氮的浓度下,敏感性分别为0.48和1.4,在473k的温度下分别在573k的温度下,得到1.3的敏感性100ppm乙醇。制备的纳米结构型氧化钨膜显示出具有很大的气体敏感性,这使得它们为具有高灵敏度和低功耗的气体传感器制造的良好候选者。

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