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Investigation of Microstructure and Nanoindentation Hardness of C

机译:C的微观结构和纳米狭窄硬度的研究

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摘要

The microstructure and nanoindentation hardness of unirradiated, irradiated, annealed and corroded SiC coatings were characterized. Irradiation of 400 keV C+ and 200 keV He+ with approximately 10 dpa did not cause obvious amorphous transformation to nanocrystal SiC coatings and induced helium bubbles with 2–3 nm dimension distributed uniformly in the SiC matrix. High temperature annealing resulted in the transformation of SiC nanocrystals into columnar crystals in the irradiated region. Line-shaped bubble bands formed at the columnar crystal boundaries and their stacking fault planes and made the formation of microcracks of hundreds of nanometers in length. Meanwhile, some isolated helium bubbles distributed in SiC grains still maintained a size of 2–3 nm, despite annealing at 1200 °C for 5 h. The SiC coating showed excellent corrosion resistance under high-temperature, high-pressure water. The weight of the sample decreased with the increase of corrosion time. The nanoindentation hardness and the elastic modulus increased significantly with C+ and He+ irradiation, while their values decreased with high-temperature annealing. An increase in the annealing temperature led to an increased reduction in the values. Corrosion caused the decrease of nanoindentation hardness and the elastic modulus in the whole test depth range, whether the samples were irradiated or unirradiated.
机译:特征在于未照射,照射,退火和腐蚀SiC涂层的微观结构和纳米抑制硬度。具有大约10dPa的400keV C +和200keV He +的照射并未对纳米晶SiC涂层造成明显的无定形变换,并在SiC基质中均匀地分布2-3 nm尺寸的氦气泡。高温退火导致SiC纳米晶体的转化为辐射区域中的柱状晶体。线状气泡带形成在柱状晶体边界及其堆叠故障平面上,并使数百纳米的微裂纹形成为数百纳米。同时,在SiC晶粒中分布的一些分离的氦气泡仍然保持2-3nm的尺寸,尽管在1200℃下退火5小时。 SiC涂层在高温高压水下显示出优异的耐腐蚀性。随着腐蚀时间的增加,样品的重量降低。纳米狭窄硬度和弹性模量随着C +和HE +辐射而显着增加,而它们的值随高温退火而降低。退火温度的增加导致值的减少增加。耐腐蚀导致纳米狭窄硬度和整个测试深度范围内的弹性模量降低,是否样品被照射或未照射。

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