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Porous Si Partially Filled with Water Molecules—Crystal Structure Energy Bands and Optical Properties from First Principles

机译:部分填充水分子的多孔硅—第一原理的晶体结构能带和光学性质

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摘要

The paper reports the results on first-principles investigation of energy band spectrum and optical properties of bulk and nanoporous silicon. We present the evolution of energy band-gap, refractive indices and extinction coefficients going from the bulk Si of cubic symmetry to porous Si with periodically ordered square-shaped pores of 7.34, 11.26 and 15.40 Å width. We consider two natural processes observed in practice, the hydroxylation of Si pores (introduction of OH groups into pores) and the penetration of water molecules into Si pores, as well as their impact on the electronic spectrum and optical properties of Si superstructures. The penetration of OH groups into the pores of the smallest 7.34 Å width causes a disintegration of hydroxyl groups and forms non-bonded protons which might be a reason for proton conductivity of porous Si. The porosity of silicon increases the extinction coefficient, , in the visible range of the spectrum. The water structuring in pores of various diameters is analysed in detail. By using the bond valence sum approach we demonstrate that the types and geometry of most of hydrogen bonds created within the pores manifest a structural evolution from distorted hydrogen bonds inherent to small pores (∼7 Å) to typical hydrogen bonds observed by us in larger pores (∼15 Å) which are consistent with those observed in a wide database of inorganic crystals.
机译:本文报道了第一性原理研究的结果,主要研究了能带谱和块状和纳米多孔硅的光学性质。我们介绍了从立方对称的整体Si到具有周期性排列的7.34、11.26和15.40Å宽度正方形孔的多孔Si的能带隙,折射率和消光系数的演变。我们考虑了在实践中观察到的两个自然过程,即Si孔的羟基化(将OH基引入孔中)和水分子渗透到Si孔中,以及它们对Si超结构的电子光谱和光学性质的影响。 OH基团渗透到最小宽度为7.34Å的孔中会导致羟基分解并形成未键合的质子,这可能是多孔Si质子传导性的原因。硅的孔隙率在光谱的可见范围内增加了消光系数。详细分析了各种直径的孔隙中的水结构。通过使用键价和方法,我们证明了在孔中产生的大多数氢键的类型和几何结构表现出从小孔固有的扭曲氢键(约7Å)到我们在大孔中观察到的典型氢键的结构演变。 (〜15Å),与在广泛的无机晶体数据库中观察到的一致。

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