The Large-Scale Preparation and Optical Properties of MoS2/WS2 Vertical Hetero-Junction

摘要

A variety of hetero-junctions can be constructed to form the basic structural units in the different optoelectronic devices, such as the photo-detectors, solar cells, sensors and light-emitting diodes. In our research, the large-area high-quality MoS /WS vertical hetero-junction are prepared by the two-step atmospheric pressure chemical vapor deposition (APCVD) methods and the dry transfer method, and the corresponding optimal reaction conditions of MoS /WS vertical hetero-junction are obtained. The morphology, composition and optical properties of MoS /WS vertical hetero-junction are systematically characterized by the optical microscopy, Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy and the field emission scanning electron microscopy. Compared to the mechanical transfer method, the MoS /WS vertical hetero-junction sample obtained by the APCVD and dry transfer methods have lower impurity content, cleaner interfaces and tighter interlayer coupling. Besides, the strong interlayer coupling and effective interlayer charge transfer of MoS /WS vertical hetero-junction are also further studied. The photoluminescence intensity of MoS /WS vertical hetero-junction is significantly reduced compared to the single MoS or WS material. In general, this research can help to achieve the large-scale preparation of various Van der Waals hetero-junctions, which can lay the foundation for the new application of optoelectronic devices.