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首页> 外文期刊>Theoretical and Experimental Chemistry >Preparation, Structure and Functional Properties of MoS2 and WS2 Nanocomposites with Inorganic Chalcogenide Semiconductors: a Review
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Preparation, Structure and Functional Properties of MoS2 and WS2 Nanocomposites with Inorganic Chalcogenide Semiconductors: a Review

机译:MOS2和WS2纳米复合材料的制备,结构和功能性质,具有无机硫属化物半导体:综述

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摘要

Methods of preparation, crystal structure, morphology, electronic characteristics, and functional properties of composites formed by nanoparticles of inorganic chalcogenide semiconductors and nanosheets of layered MoS2 and WS2 are analyzed. Promise has been shown for the use of such nanomaterials in photo- and electrocatalysis as well as in the design of various new electronic devices.
机译:分析了由无机硫代硫胺基半导体纳米颗粒和层状MOS2和WS2的纳米粒子形成的复合材料的制备方法,晶体结构,形态学,电子特性和功能性质。 已经证明了使用这种纳米材料在光照和电常放中的使用以及各种新型电子设备的设计。

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