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Nanoscale Imaging and Spectroscopy of Band Gap and Defects in Polycrystalline Photovoltaic Devices

机译:多晶光伏器件中带隙和缺陷的纳米级成像和光谱学

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摘要

Improving the power conversion efficiency of photovoltaic (PV) devices is challenging because the generation, separation and collection of electron-hole pairs are strongly dependent on details of the nanoscale chemical composition and defects which are often poorly known. In this work, two novel scanning probe nano-spectroscopy techniques, direct-transmission near-field scanning optical microscopy (dt-NSOM) and photothermal induced resonance (PTIR), are implemented to probe the distribution of defects and the bandgap variation in thin lamellae extracted from polycrystalline CdTe PV devices. dt-NSOM provides high-contrast spatially-resolved maps of light transmitted through the sample at selected wavelengths. PTIR provides absorption maps and spectra over a broad spectral range, from visible to mid-infrared. Results show variation of the bandgap through the CdTe thickness and from grain to grain that is spatially uncorrelated with the distributions of shallow and deep defects.
机译:由于电子-空穴对的产生,分离和收集在很大程度上取决于通常不为人所知的纳米级化学组成和缺陷的细节,因此提高光伏(PV)器件的功率转换效率具有挑战性。在这项工作中,实现了两种新颖的扫描探针纳米光谱技术,即直接透射近场扫描光学显微镜(dt-NSOM)和光热感应共振(PTIR),以探测薄层中缺陷的分布和带隙变化从多晶CdTe光伏器件中提取。 dt-NSOM提供了在选定波长下透射穿过样品的光的高对比度空间分辨图。 PTIR提供了从可见光到中红外的宽光谱范围内的吸收图和光谱。结果表明,带隙在CdTe厚度范围内以及从晶粒到晶粒的变化在空间上与浅缺陷和深缺陷的分布无关。

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