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a-Si:H/SiNW shell/core for SiNW solar cell applications

机译:用于SiNW太阳能电池应用的a-Si:H / SiNW壳/核

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摘要

Vertically aligned silicon nanowires have been synthesized by the chemical etching of silicon wafers. The influence of a hydrogenated amorphous silicon (a-Si:H) layer (shell) on top of a silicon nanowire (SiNW) solar cell has been investigated. The optical properties of a-Si:H/SiNWs and SiNWs are examined in terms of optical reflection and absorption properties. In the presence of the a-Si:H shell, 5.2% reflection ratio in the spectral range (250 to 1,000 nm) is achieved with a superior absorption property with an average over 87% of the incident light. In addition, the characteristics of the solar cell have been significantly improved, which exhibits higher open-circuit voltage, short-circuit current, and efficiency by more than 15%, 12%, and 37%, respectively, compared with planar SiNW solar cells. Based on the current–voltage measurements and morphology results, we show that the a-Si:H shell can passivate the defects generated by wet etching processes.
机译:通过硅晶片的化学蚀刻已经合成了垂直取向的硅纳米线。研究了氢化非晶硅(a-Si:H)层(壳)对硅纳米线(SiNW)太阳能电池顶部的影响。根据光学反射和吸收特性检查了a-Si:H / SiNWs和SiNWs的光学特性。在存在a-Si:H壳的情况下,在光谱范围(250至1,000nm)内反射率达到5.2%,吸收性能优异,平均入射光超过87%。此外,太阳能电池的特性已得到显着改善,与平面SiNW太阳能电池相比,其开路电压,短路电流和效率分别高出15%,12%和37%以上。根据电流-电压测量结果和形态结果,我们表明a-Si:H壳可以钝化湿法蚀刻工艺产生的缺陷。

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