The Improvement of Hole Gas Accumulation in Al-Catalyzed SiNW/i-Ge Core-Shell Structure by B-Doped Outermost Si Shell Formation

摘要

Core-shell nanowire (NW) structures haverecently attracted great attention for high electronmobility transistors due to their remarkable electricaland mechanical properties. From our previous reports, the vapor-liquid-solid (VLS) growth using Alcatalyst could create single crystalline SiNWs with theresolving of metal catalyst contamination problem.The hole gas accumulation in unintentional Aldoped p-Si/Ge core-shell structure were observed ini-Ge shell region. However, the carrier concentrationof unintentional Al doping from catalyst as p-typedopants in SiNWs was limited and difficult to furtherincrease by adding of B doping, resulting in the limitof hole gas density. Therefore, in this study, theeffects of various B doping in p-Si shell outermostlayer in the p-Si/i-Ge/p-Si core-double shell NWstructure on the hole gas generation were investigated.