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Au nanostructure arrays for plasmonic applications: annealed island films versus nanoimprint lithography

机译:等离子应用的金纳米结构阵列:退火岛膜与纳米压印光刻

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摘要

This paper attempts to compare the main features of random and highly ordered gold nanostructure arrays (NSA) prepared by thermally annealed island film and nanoimprint lithography (NIL) techniques, respectively. Each substrate possesses different morphology in terms of plasmonic enhancement. Both methods allow such important features as spectral tuning of plasmon resonance position depending on size and shape of nanostructures; however, the time and cost is quite different. The respective comparison was performed experimentally and theoretically for a number of samples with different geometrical parameters. Spectral characteristics of fabricated NSA exhibited an expressed plasmon peak in the range from 576 to 809 nm for thermally annealed samples and from 606 to 783 nm for samples prepared by NIL. Modelling of the optical response for nanostructures with typical shapes associated with these techniques (parallelepiped for NIL and semi-ellipsoid for annealed island films) was performed using finite-difference time-domain calculations. Mathematical simulations have indicated the dependence of electric field enhancement on the shape and size of the nanoparticles. As an important point, the distribution of electric field at so-called ‘hot spots’ was considered. Parallelepiped-shaped nanoparticles were shown to yield maximal enhancement values by an order of magnitude greater than their semi-ellipsoid-shaped counterparts; however, both nanoparticle shapes have demonstrated comparable effective electrical field enhancement values. Optimized Au nanostructures with equivalent diameters ranging from 85 to 143 nm and height equal to 35 nm were obtained for both techniques, resulting in the largest electrical field enhancement. The application of island film thermal annealing method for nanochips fabrication can be considered as a possible cost-effective platform for various surface-enhanced spectroscopies; while the NIL-fabricated NSA looks like more effective for sensing of small-size objects.
机译:本文试图比较分别通过热退火岛膜和纳米压印光刻技术制备的随机和高度有序的金纳米结构阵列(NSA)的主要特征。就等离子体增强而言,每种底物具有不同的形态。两种方法都具有重要的功能,例如根据纳米结构的大小和形状对等离子体共振位置进行光谱调节;但是,时间和成本却大不相同。对许多具有不同几何参数的样品进行了实验和理论上的比较。制成的NSA的光谱特征在热退火样品中表现出的等离激元峰在576至809 nm范围内,而NIL制备的样品在606至783 nm范围内。使用有限差分时域计算,对具有与这些技术相关联的典型形状的纳米结构(对于NIL为平行六面体,对岛状薄膜为半椭圆体)的光学响应进行建模。数学模拟表明电场增强对纳米颗粒的形状和大小的依赖性。重要的是,考虑了所谓“热点”处的电场分布。平行六面体形的纳米颗粒显示出最大的增强值,比其半椭圆形的对应物大一个数量级。然而,两种纳米颗粒形状均显示出可比较的有效电场增强值。两种技术均获得了等效直径范围从85到143nm,高度等于35nm的优化Au纳米结构,从而最大程度地增强了电场。岛膜热退火方法在纳米芯片制造中的应用可以被认为是各种表面增强光谱学的可能的低成本平台。 NIL制造的NSA看起来更有效地感测小型物体。

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