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Electronic Property Modulation of One‐Dimensional Extended Graphdiyne Nanowires from a First‐Principle Crystal Orbital View

机译:从第一性原理晶体轨道的观点看一维扩展Graphdiyne纳米线的电子特性调制。

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摘要

Graphdiyne and derivatives with delocalized π‐electron systems are of particular interest owing to their structural, electronic, and transport properties, which are important for potential applications in next‐generation electronics. Inspired by recently obtained extended graphdiyne nanowires, explorations of the modulation of the band gap and carrier mobility of this new species are still needed before application in device fabrication. To provide a deeper understanding of these issues, herein we present theoretical studies of one‐dimensional extended graphdiyne nanowires using first‐principle calculations. Modulation of the electronic properties of the extended graphdiyne nanowire was investigated systemically by considering several chemical and physical factors, including electric field, chemical functionalization, and carbo‐merization. The band gap was observed to increase upon application of an electric field parallel to the plane of the synthesized graphdiyne nanowire in a non‐periodic direction. Although chemical functionalization and carbo‐merization caused the band gaps to decrease, the semiconducting property of the nanowires was preserved. Band gap engineering of the extended graphdiyne nanowires was explored regarding the field strength and the number of −C≡C− units in the carbon chain fragments. The charge carrier mobility of chemically functionalized and carbo‐merized extended graphdiyne nanowires was also calculated to provide a comparison with pristine nanowire. Moreover, crystal orbital analysis was performed in order to discern the electronic and charge transport properties of the extended graphdiyne nanowires modified by the aforementioned chemical and physical factors.
机译:石墨二炔和具有离域π电子系统的衍生物由于其结构,电子和传输特性而特别受关注,这对于下一代电子学中的潜在应用至关重要。受最近获得的延伸的石墨二炔纳米线的启发,在应用到器件制造之前,仍然需要探索这种新物种的带隙和载流子迁移率的方法。为了提供对这些问题的更深入的了解,在这里,我们使用第一原理计算方法对一维延伸的石墨二炔纳米线进行理论研究。通过考虑多种化学和物理因素,包括电场,化学功能化和碳商化,系统地研究了延伸的石墨二炔纳米线的电子特性调节。观察到,在平行于合成石墨二炔纳米线平面的电场在非周期性方向上施加的带隙会增加。尽管化学功能化和碳聚合导致带隙减小,但纳米线的半导体性质得以保留。关于场强和碳链片段中-C≡C-单元的数目,研究了扩展的石墨二炔纳米线的带隙工程。还计算了化学功能化和碳聚合的扩展石墨二炔纳米线的电荷载流子迁移率,以提供与原始纳米线的比较。此外,进行了晶体轨道分析以便辨别被上述化学和物理因素修饰的延伸的石墨二炔纳米线的电子和电荷传输性质。

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