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Direct Growth of Graphene on Insulator Using Liquid Precursor Via an Intermediate Nanostructured State Carbon Nanotube

机译:石墨烯在绝缘体上使用液态前体通过中间纳米结构态碳纳米管直接生长

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摘要

Synthesis of high-quality graphene layers on insulating substrates is highly desirable for future graphene-based high-speed electronics. Besides the use of gaseous hydrocarbon sources, solid and liquid hydrocarbon sources have recently shown great promises for high-quality graphene growth. Here, I report chemical vapor deposition growth of mono- to few-layer graphene directly on SiO2 substrate using ethanol as liquid hydrocarbon feedstock. The growth process of graphene has been systematically investigated as a function of annealing temperature as well as different seed layers. Interestingly, it was found that the carbon atoms produced by thermal decomposition of ethanol form sp2 carbon network on SiO2 surface thereby forming nanographene flakes via an intermediate carbon-based nanostructured state carbon nanotube. This work might pave the way to an understanding for economical and catalyst-free graphene growth compatible with current silicon-processing techniques, and it can be applied on a variety of insulating surfaces including quartz, sapphire, and fused silica.Electronic supplementary materialThe online version of this article (10.1186/s11671-019-2935-9) contains supplementary material, which is available to authorized users.
机译:绝缘基片上高质量石墨烯层的合成对于未来基于石墨烯的高速电子设备是非常需要的。除了使用气态碳氢化合物来源之外,固态和液态碳氢化合物来源最近也显示出高质量石墨烯生长的广阔前景。在这里,我报道了使用乙醇作为液态碳氢化合物原料直接在SiO2衬底上单层至数层石墨烯的化学气相沉积生长。石墨烯的生长过程已根据退火温度以及不同的种子层进行了系统研究。有趣的是,发现乙醇热分解产生的碳原子在SiO2表面形成sp 2 碳网络,从而通过中间碳基纳米结构态碳纳米管形成纳米石墨烯薄片。这项工作可能为了解与当前硅加工技术兼容的经济且无催化剂的石墨烯生长铺平了道路,并且可以应用于石英,蓝宝石和熔融石英等各种绝缘表面。本文(10.1186 / s11671-019-2935-9)中的内容包含补充材料,可供授权用户使用。

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