首页> 美国卫生研究院文献>Nanoscale Research Letters >3D CoMoSe4 Nanosheet Arrays Converted Directly from Hydrothermally Processed CoMoO4 Nanosheet Arrays by Plasma-Assisted Selenization Process Toward Excellent Anode Material in Sodium-Ion Battery
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3D CoMoSe4 Nanosheet Arrays Converted Directly from Hydrothermally Processed CoMoO4 Nanosheet Arrays by Plasma-Assisted Selenization Process Toward Excellent Anode Material in Sodium-Ion Battery

机译:通过等离子体辅助硒化法将水热处理的CoMoO4纳米片阵列直接转换成3D CoMoSe4纳米片阵列从而获得钠离子电池中的优异阳极材料

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摘要

In this work, three-dimensional (3D) CoMoSe4 nanosheet arrays on network fibers of a carbon cloth denoted as CoMoSe4@C converted directly from CoMoO4 nanosheet arrays prepared by a hydrothermal process followed by the plasma-assisted selenization at a low temperature of 450 °C as an anode for sodium-ion battery (SIB) were demonstrated for the first time. With the plasma-assisted treatment on the selenization process, oxygen (O) atoms can be replaced by selenium (Se) atoms without the degradation on morphology at a low selenization temperature of 450 °C. Owing to the high specific surface area from the well-defined 3D structure, high electron conductivity, and bi-metal electrochemical activity, the superior performance with a large sodium-ion storage of 475 mA h g−1 under 0.5–3 V potential range at 0.1 A g−1 was accomplished by using this CoMoSe4@C as the electrode. Additionally, the capacity retention was well maintained over 80 % from the second cycle, exhibiting a satisfied capacity of 301 mA h g−1 even after 50 cycles. The work delivered a new approach to prepare a binary transition metallic selenide and definitely enriches the possibilities for promising anode materials in SIBs with high performances.Electronic supplementary materialThe online version of this article (10.1186/s11671-019-3035-6) contains supplementary material, which is available to authorized users.
机译:在这项工作中,表示碳纤维网状纤维上的三维(3D)CoMoSe4纳米片阵列直接表示为CoMoSe4 @ C,它是通过水热工艺直接从CoMoO4纳米片阵列转换而来,然后在450 low°的低温下进行等离子体辅助硒化首次证明了C作为钠离子电池(SIB)的阳极。通过在硒化过程中进行等离子体辅助处理,可以在450℃的低硒化温度下用硒(Se)原子取代氧(O)原子,而不会在形态上降低。由于定义明确的3D结构具有较高的比表面积,较高的电子电导率和双金属电化学活性,因此具有优异的性能,且钠离子存储量高达475 mA h g -1 通过使用该CoMoSe4 @ C作为电极,在0.1 A g -1 的0.5–3 V电位范围内完成了工作。另外,从第二个循环开始,容量保持率良好地保持在80%以上,即使在50个循环之后,仍显示出301 mA h g -1 的满意容量。这项工作提供了一种制备二元过渡金属硒化物的新方法,并无疑丰富了具有高性能的SIB中有希望的阳极材料的可能性。电子补充材料本文的在线版本(10.1186 / s11671-019-3035-6)包含补充材料,可供授权用户使用。

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