We show that a triple-layer metal-insulator-metal (MIM) structure has spectrally selective IR absorption, while an ultra-thin metal film has non-selective absorption in the near infrared wavelengths. Both sub-wavelength scale structures were implemented with an ultra-thin 6 nm Cr top layer. MIM structure was demonstrated to have near perfect absorption at λ = 1.2 μm and suppressed absorption at λ = 1.8 μm in which experimental and simulated absorptions of the thin Cr film are even higher than the MIM. Occurrence of absorption peaks and dips in the MIM were explained with the electric field intensity localization as functions of both the wavelength and the position. It has been shown that the power absorption in the lossy material is a strong function of the electric field intensity i.e. the more the electric field intensity, the more the absorption and vice versa. Therefore, it is possible to engineer IR emissive properties of these ultra-thin nanocavities by controlling the electric field localization with proper designs.
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