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Acoustic build-up in on-chip stimulated Brillouin scattering

机译:片上受激布里渊散射中的声波累积

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摘要

We investigate the role of the spatial evolution of the acoustic field in stimulated Brillouin scattering processes in short high-gain structures. When the gain is strong enough that the gain length becomes comparable to the acoustic wave decay length of order 100 microns, standard approximations treating the acoustic field as a local response no longer apply. Treating the acoustic evolution more accurately, we find that the backward SBS gain of sub-millimetre long waveguides is significantly reduced from the value obtained by the conventional treatment because the acoustic mode requires several decay lengths to build up to its nominal value. In addition, the corresponding resonance line is broadened with the development of side bands. In contrast, we argue that intra-mode forward SBS is not expected to show these effects. Our results have implications for several recent proposals and experiments on high-gain stimulated Brillouin scattering in short semiconductor waveguides.
机译:我们研究了短高增益结构中受激布里渊散射过程中声场空间演化的作用。当增益足够强到足以使增益长度与100微米数量级的声波衰减长度可比时,不再适用将声场视为局部响应的标准近似法。更准确地处理声演化,我们发现,亚毫米长波导的后向SBS增益比传统处理获得的值明显降低,因为声模需要几个衰减长度才能建立其标称值。另外,随着边带的发展,相应的共振线变宽。相反,我们认为模式内前向SBS不会显示出这些影响。我们的研究结果对短半导体波导中高增益受激布里渊散射的一些最新建议和实验具有重要意义。

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