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Relaxation dynamics in magnetic antidot lattice arrays of Co/Pt with perpendicular anisotropy

机译:具有垂直各向异性的Co / Pt磁性解毒点阵阵列中的弛豫动力学

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摘要

The topic of magnetic antidot lattice (MAL) arrays has drawn attention from both fundamental research as well as from application point of view. MAL arrays are promising candidates for making domain engineering in thin films. For various applications it is necessary to understand the magnetization reversal mechanism as well as the relaxation dynamics. In this context we have studied magnetic antidot lattice (MAL) arrays of Co/Pt with perpendicular anisotropy fabricated by combination of photolithography and sputtering deposition. Kerr microscopy domain imaging for the continuous thin film reveals the formation of typical bubble domains of perpendicular media with high anisotropy. However, presence of periodic holes in the MAL arrays lead to nucleation of localised smaller bubbles. We have performed simulations using object oriented micromagnetic framework (OOMMF) which reproduced the experimental results even considering antidot arrays in nano dimension. In literature it has been reported that in MAL arrays with in-plane anisotropy the domain propagation gets significantly hindered by the presence of the holes. However here we show that in perpendicularly magnetized Co/Pt the propagation of the domain walls is not restricted by the presence of the antidots. Further we have performed magnetic relaxation study and found that the global relaxation time for the MAL arrays of Co/Pt is faster as compared to it’s parent thin film. This behavior is opposite to what has been observed in literature for in-plane magnetized MAL arrays.
机译:磁性解毒点阵(MAL)阵列的主题已从基础研究以及应用角度吸引了人们的注意力。 MAL阵列是用于薄膜领域工程的有前途的候选者。对于各种应用,有必要了解磁化反转机理以及弛豫动力学。在这种情况下,我们研究了通过光刻和溅射沉积相结合制造的具有垂直各向异性的Co / Pt的磁性点阵(MAL)阵列。连续薄膜的Kerr显微镜畴成像揭示了具有高各向异性的垂直介质的典型气泡畴的形成。但是,MAL阵列中存在周期性的孔会导致局部较小气泡的形核。我们已经使用面向对象的微磁框架(OOMMF)进行了模拟,即使考虑了纳米尺寸的反点阵列,该模拟也重现了实验结果。在文献中已经报道,在具有面内各向异性的MAL阵列中,孔的存在显着阻碍了畴的传播。但是,这里我们显示出在垂直磁化的Co / Pt中,畴壁的传播不受解毒剂的存在的限制。此外,我们进行了磁弛豫研究,发现与母体薄膜相比,Co / Pt MAL阵列的整体弛豫时间更快。此行为与文献中关于平面磁化MAL阵列的观察相反。

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