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First-principles study of the complex magnetism in Fe16N2

机译:Fe16N2中复磁性的第一性原理研究

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摘要

Magnetic exchange interactions in pure and vanadium (V)-doped Fe16N2 are studied within the framework of density functional theory (DFT). The Curie temperatures were obtained via both mean field approximation (MFA) and Monte Carlo (MC) calculations based on interactions that were obtained through DFT. The Curie temperature (TC) for pure Fe16N2 that was obtained under MFA is substantially larger than the experimental value, suggesting the importance of thermal fluctuations. At zero field, the calculated magnetic susceptibility shows a sharp peak at T = TC that corresponds to the presence of localized d-states. From the nature of the exchange interactions, we have determined the reason for the occurrence of the giant magnetic moment in this material, which remained a mystery for decades. Finally, we posit that Fe16N2 can also act as a satisfactory spin injector for III–V semiconductors, in addition to its application as a permanent magnet, since it has very high spin polarization (compared to elemental ferromagnets) and smaller lattice mismatch (compared to half-metallic Heusler alloys) with conventional III–V semiconductors such as GaAs and InGaAs. We demonstrate this application in the case of Fe16N2(001)/InGaAs(001) hetero-structures, which exhibit substantial spin polarization in the semiconductor (InGaAs) region. PACS number: 82.65.My, 82.20.Pm, 82.30.Lp, 82.65.Jv.
机译:在密度泛函理论(DFT)的框架内研究了纯钒和掺杂钒(V)的Fe16N2中的磁性交换相互作用。居里温度通过基于DFT获得的相互作用的平均场近似(MFA)和蒙特卡洛(MC)计算获得。在MFA下获得的纯Fe16N2的居里温度(TC)大大高于实验值,表明热波动的重要性。在零磁场下,计算出的磁化率在T = TC处显示一个尖峰,对应于局部d态的存在。根据交换相互作用的性质,我们确定了这种材料中出现巨大磁矩的原因,数十年来一直是一个谜。最后,我们认为,Fe16N2除具有永久磁铁的功能外,还可以作为III-V半导体的自旋注入器,因为它具有很高的自旋极化率(与元素铁磁体相比)和较小的晶格失配(与半金属Heusler合金)和传统的III–V半导体,例如GaAs和InGaAs。我们在Fe16N2(001)/ InGaAs(001)异质结构的情况下证明了此应用,该异质结构在半导体(InGaAs)区域中表现出明显的自旋极化。 PACS编号:82.65.My,82.20.Pm,82.30.Lp,82.65.Jv.

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