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Surface structure promoted high-yield growth and magnetotransport properties of Bi2Se3 nanoribbons

机译:表面结构促进了Bi2Se3纳米带的高产率生长和磁传输性能

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摘要

In the present work, a catalyst-free physical vapour deposition method is used to synthesize high yield of Bi2Se3 nanoribbons. By replacing standard glass or quartz substrates with aluminium covered with ultrathin porous anodized aluminium oxide (AAO), the number of synthesized nanoribbons per unit area can be increased by 20–100 times. The mechanisms of formation and yield of the nanoribbons synthesized on AAO substrates having different arrangement and size of pores are analysed and discussed. It is shown that the yield and average length of the nanoribbons can base tuned by adjustment of the synthesis parameters. Analysis of magnetotransport measurements for the individual Bi2Se3 nanoribbons transferred on a Si/SiO2 substrate show the presence of three different populations of charge carriers, originating from the Dirac surface states, bulk carriers and carriers from a trivial 2DEG from an accumulation layer at the Bi2Se3 nanoribbon interface with the substrate.
机译:在目前的工作中,无催化剂的物理气相沉积方法用于合成高产率的Bi2Se3纳米带。通过用覆盖有超薄多孔阳极氧化铝(AAO)的铝代替标准的玻璃或石英基板,每单位面积的合成纳米带数量可以增加20-100倍。分析和讨论了在具有不同孔排列和尺寸的AAO基底上合成的纳米带的形成机理和产率。结果表明,可以通过调节合成参数来调节纳米带的产率和平均长度。对转移到Si / SiO2衬底上的各个Bi2Se3纳米带的磁输运测量结果的分析表明,存在三种不同的电荷载流子群,它们来自Dirac表面态,体载流子以及来自Bi2Se3纳米带堆积层的琐碎2DEG载流子。与基材接触。

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