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Elementary Process for CVD Graphene on Cu(110): Size-selective Carbon Clusters

机译:Cu(110)上CVD石墨烯的基本工艺:尺寸选择碳簇

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摘要

Revealing the graphene growth mechanism at the atomic-scale is of great importance for achieving high quality graphene. However, the lack of direct experimental observation and density functional theory (DFT) verification hinders a comprehensive understanding of the structure of the carbon clusters and evolution of the graphene growth on surface. Here, we report an in-situ low-temperature scanning tunneling microscopy (LT-STM) study of the elementary process of chemical vapor deposition (CVD) graphene growth via thermal decomposition of methane on Cu(110), including the formation of monodispersed carbon clusters at the initial stage, the graphene nucleation and the ripening of graphene islands to form continuous graphene film. STM measurement, supported by DFT calculations, suggests that the carbon clusters on the surface are C2H5. It is found that graphene layers can be joined by different domains, with a relative misorientation of 30°. These graphene layers can be decoupled from Cu(110) through low temperature thermal cycling.
机译:在原子尺度上揭示石墨烯的生长机理对于获得高质量的石墨烯至关重要。但是,缺乏直接的实验观察和密度泛函理论(DFT)验证,阻碍了对碳簇结构和表面石墨烯生长演变的全面理解。在这里,我们报告原位低温扫描隧道显微镜(LT-STM),研究了甲烷在Cu(110)上的热分解,包括单分散碳的形成,化学气相沉积(CVD)石墨烯生长的基本过程。石墨烯在初始阶段聚集,石墨烯成核和石墨烯岛的成熟形成连续的石墨烯薄膜。 DFT计算支持的STM测量表明,表面的碳簇为C2H5。发现石墨烯层可以通过不同的区域连接,相对取向差为30°。这些石墨烯层可以通过低温热循环与Cu(110)分离。

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