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Thermal conductivity of skutterudite CoSb3 from first principles: Substitution and nanoengineering effects

机译:从第一原理出发方钴矿CoSb3的热导率:取代和纳米工程效应

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摘要

CoSb3-based skutterudites are promising intermediate-temperature thermoelectric materials and fundamental understanding of the thermal transport in CoSb3 is crucial for further improving its performance. We herein calculate the lattice thermal conductivity κL of CoSb3 with first-principles methods and conduct a comprehensive analysis on phonon mode contribution, relaxation time and mean free path (MFP) distributions. The contribution of optical phonons is found to be significant (28% at 300 K) and important optical modes usually involve two or more pnicogen atoms moving synchronously. The MFP (~135 nm at 300 K) corresponding to 50% κL accumulation in CoSb3 is much larger than that predicted from the kinetic theory (~4 nm), providing an opportunity to reduce κL by nanoengineering. The effects of elemental substitution and nanoengineering on κL are therefore investigated. A 10% substitution of Sb by As results in 57% reduction of κL while the in-plane (cross-plane) κL of a 50-nm CoSb3 thin film is only 56% (33%) of the bulk κL at 300 K. The impurity scattering and boundary scattering mainly suppress phonons in different frequency regimes. By combining these two effects, κL can be reduced by more than 70% at 300 K, potentially leading to much improved ZT near room temperature.
机译:基于CoSb3的方钴矿是有前途的中温热电材料,对CoSb3中热传递的基本了解对于进一步改善其性能至关重要。我们在这里用第一原理方法计算CoSb3的晶格导热系数κL,并对声子模式贡献,弛豫时间和平均自由程(MFP)分布进行全面分析。发现光子的贡献很大(在300 K时为28%),重要的光学模式通常包含两个或多个同步移动的pogenogen原子。对应于CoSb3中50%κL累积的MFP(在300 K时约为135nm)远大于动力学理论所预测的MFP(约4 nm),从而提供了通过纳米工程降低κL的机会。因此,研究了元素取代和纳米工程对κL的影响。用As替代Sb 10%可使κL降低57%,而50nm CoSb3薄膜的面内(跨平面)κL在300 K时仅为整体κL的56%(33%)。杂质散射和边界散射主要在不同频率范围内抑制声子。结合这两种作用,可以在300 K下将κL降低70%以上,潜在地导致室温附近ZT大大改善。

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