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Probing the electronic and spintronic properties of buried interfaces by extremely low energy photoemission spectroscopy

机译:通过极低能量的光发射光谱探测掩埋界面的电子和自旋电子性质

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摘要

Ultraviolet photoemission spectroscopy (UPS) is a powerful tool to study the electronic spin and symmetry features at both surfaces and interfaces to ultrathin top layers. However, the very low mean free path of the photoelectrons usually prevents a direct access to the properties of buried interfaces. The latter are of particular interest since they crucially influence the performance of spintronic devices like magnetic tunnel junctions (MTJs). Here, we introduce spin-resolved extremely low energy photoemission spectroscopy (ELEPS) to provide a powerful way for overcoming this limitation. We apply ELEPS to the interface formed between the half-metallic Heusler compound Co2MnSi and the insulator MgO, prepared as in state-of-the-art Co2MnSi/MgO-based MTJs. The high accordance between the spintronic fingerprint of the free Co2MnSi surface and the Co2MnSi/MgO interface buried below up to 4 nm MgO provides clear evidence for the high interface sensitivity of ELEPS to buried interfaces. Although the absolute values of the interface spin polarization are well below 100%, the now accessible spin- and symmetry-resolved wave functions are in line with the predicted existence of non-collinear spin moments at the Co2MnSi/MgO interface, one of the mechanisms evoked to explain the controversially discussed performance loss of Heusler-based MTJs at room temperature.
机译:紫外光发射光谱法(UPS)是研究超薄顶层的表面和界面的电子自旋和对称特征的强大工具。但是,光电子的平均自由程非常低,通常会阻止直接访问掩埋界面的特性。后者特别受关注,因为它们会严重影响自旋电子器件(如磁隧道结(MTJ))的性能。在这里,我们介绍了自旋分辨的极低能量光发射光谱(ELEPS),为克服这一局限提供了有力的方法。我们将ELEPS应用于半金属Heusler化合物Co2MnSi和绝缘体MgO之间的界面,该界面是按照最新的基于Co2MnSi / MgO的MTJ制备的。游离Co2MnSi表面的自旋电子指纹与掩埋在4 upnm MgO以下的Co2MnSi / MgO界面之间的高度一致性为ELEPS对掩埋界面的高界面敏感性提供了明确的证据。尽管界面自旋极化的绝对值远低于100%,但现在可以访问的自旋和对称分辨波函数与Co2MnSi / MgO界面上非共线自旋矩的预测存在相符,这是机制之一呼吁解释在室温下有争议的基于Heusler的MTJ的性能损失。

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