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Dynamics of surface evolution in semiconductor thin films grown from a chemical bath

机译:化学浴中生长的半导体薄膜中表面演变的动力学

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摘要

Dynamics of surface evolution in CdS thin films grown by chemical bath deposition technique has been studied from time sequence of atomic force micrographs. Detailed scaling analysis of surface fluctuation in real and Fourier space yielded characteristic exponents αloc = 0.78 ± 0.07, α = 2.20 ± 0.08, αs = 1.49 ± 0.22, β = 0.86 ± 0.05 and βloc = 0.43 ± 0.10, which are very different from those predicted by the local growth models and are not related to any known universality classes. The observed anomalous scaling pattern, characterized by power law scaling dependence of interface width on deposition time differently at local and global scale, with rapid roughening of the growth front has been discussed to arise as a consequence of a nonlocal effect in the form of diffusional instability.
机译:从原子力显微镜照片的时间序列研究了化学浴沉积技术生长的CdS薄膜表面演化的动力学。在实和傅立叶空间中对表面波动进行详细的尺度分析得出特征指数αloc= 0.78±0.07,α= 2.20±0.08,αs= 1.49±0.22,β= 0.86±0.05和βloc= 0.43±0.10由本地增长模型预测,与任何已知的普遍性类别均无关。已经讨论了观察到的异常缩放模式,其特征在于界面宽度对沉积时间的幂律缩放比例在局部和全局范围内不同,随着生长前沿的快速粗糙化,这是由于扩散不稳定性形式的非局部效应引起的。

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