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Nanometric alternating magnetic field generator

机译:纳米交变磁场发生器

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摘要

In this work we introduce an alternating magnetic field generator in a cylindrical nanostructure. This field appears due to the rotation of a magnetic domain wall located at some position, generating a magnetic region that varies its direction of magnetization alternately, thus inducing an alternating magnetic flux in its vicinity. This phenomenon occurs due to the competition between a spin-polarized current and a magnetic field, which allows to control both the angular velocity and the pinning position of the domain wall. As proof of concept, we study the particular case of a diameter-modulated nanowire with a spin-polarized current along its axis and the demagnetizing field produced by its modulation. This inhomogeneous field allows one to control the angular velocity of the domain wall as a function of its position along the nanowire allowing frequencies in the GHz range to be achieved. This generator could be used in telecommunications for devices in the range of radiofrequencies or, following Faraday’s induction law, could also induce an electromotive force and be used as a movable alternate voltage source in future nanodevices.
机译:在这项工作中,我们在圆柱纳米结构中引入了交变磁场发生器。该磁场是由于位于某个位置的磁畴壁的旋转而产生的,从而产生一个交替改变其磁化方向的磁性区域,从而在其附近感应出交变的磁通量。由于自旋极化电流和磁场之间的竞争而发生此现象,从而可以控制角速度和畴壁的钉扎位置。作为概念的证明,我们研究了直径调制的纳米线的特殊情况,该纳米线沿其轴具有自旋极化电流,并且通过调制产生了退磁场。这种不均匀的场允许人们根据畴壁沿纳米线的位置来控制畴壁的角速度,从而实现GHz范围内的频率。该发生器可以用于无线电频率范围内的设备的通信中,或者遵循法拉第的感应定律,还可以感应电动势,并在未来的纳米设备中用作可移动的交流电压源。

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