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Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films

机译:中间能隙状态在半导体纳米晶体膜中的电荷传输和光电导中的作用

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摘要

Colloidal semiconductor nanocrystals have attracted significant interest for applications in solution-processable devices such as light-emitting diodes and solar cells. However, a poor understanding of charge transport in nanocrystal assemblies, specifically the relation between electrical conductance in dark and under light illumination, hinders their technological applicability. Here we simultaneously address the issues of 'dark' transport and photoconductivity in films of PbS nanocrystals, by incorporating them into optical field-effect transistors in which the channel conductance is controlled by both gate voltage and incident radiation. Spectrally resolved photoresponses of these devices reveal a weakly conductive mid-gap band that is responsible for charge transport in dark. The mechanism for conductance, however, changes under illumination when it becomes dominated by band-edge quantized states. In this case, the mid-gap band still has an important role as its occupancy (tuned by the gate voltage) controls the dynamics of band-edge charges.
机译:胶体半导体纳米晶体对于可溶液加工的器件如发光二极管和太阳能电池的应用引起了极大的兴趣。然而,对纳米晶体组件中电荷传输的理解不充分,特别是在黑暗和光照下的电导率之间的关系阻碍了它们的技术应用。在这里,我们通过将PbS纳米晶体薄膜中的“暗”传输和光电导性并入光场效应晶体管中,同时解决了这一问题,该晶体管的沟道电导率由栅极电压和入射辐射控制。这些器件的光谱分辨光响应显示出弱导电的中间能带,该能带负责黑暗中的电荷传输。但是,电导的机制在受带边量化状态控制时会在光照下发生变化。在这种情况下,中间能带仍然起着重要作用,因为它的占有率(由栅极电压调节)控制着带边电荷的动态。

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