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Observation of intervalley quantum interference in epitaxial monolayer tungsten diselenide

机译:外延单层二硒化钨中间隔区量子干涉的观察

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摘要

The extraordinary electronic structures of monolayer transition metal dichalcogenides, such as the spin–valley-coupled band edges, have sparked great interest for potential spintronic and valleytronic applications based on these two-dimensional materials. In this work, we report the experimental observation of quasi-particle interference patterns in monolayer WSe2 using low-temperature scanning tunnelling spectroscopy. We observe intervalley quantum interference involving the Q valleys in the conduction band due to spin-conserving scattering processes, while spin-flipping intervalley scattering is absent. Our results establish unequivocally the presence of spin–valley coupling and affirm the large spin splitting at the Q valleys. Importantly, the inefficient spin-flipping scattering implies long valley and spin lifetime in monolayer WSe2, which is a key figure of merit for valley-spintronic applications.
机译:单层过渡金属二氢硫化物的非凡电子结构,例如自旋-谷耦合能带边缘,已经激发了对基于这些二维材料的潜在自旋电子学和谷电子学应用的极大兴趣。在这项工作中,我们报告使用低温扫描隧道光谱法对单层WSe2中的准粒子干涉图进行实验观察。我们观察到由于自旋保守的散射过程,在导带中涉及Q谷的区间间隔量子干扰,而自旋翻转间隔间隔散射不存在。我们的结果明确地确定了自旋-谷耦合的存在,并确认了Q谷处的大自旋分裂。重要的是,低效率的自旋翻转散射意味着单层WSe2的谷值和自旋寿命长,这是谷值自旋电子学应用的关键性能指标。

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