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Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2

机译:反卷积二维材料的光子和电子响应:以MoS2为例

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摘要

Evaluating and tuning the properties of two-dimensional (2D) materials is a major focus of advancing 2D science and technology. While many claim that the photonic properties of a 2D layer provide evidence that the material is “high quality”, this may not be true for electronic performance. In this work, we deconvolute the photonic and electronic response of synthetic monolayer molybdenum disulfide. We demonstrate that enhanced photoluminescence can be robustly engineered via the proper choice of substrate, where growth of MoS2 on r-plane sapphire can yield >100x enhancement in PL and carrier lifetime due to increased molybdenum-oxygen bonding compared to that of traditionally grown MoS2 on c-plane sapphire. These dramatic enhancements in optical properties are similar to those of super-acid treated MoS2, and suggest that the electronic properties of the MoS2 are also superior. However, a direct comparison of the charge transport properties indicates that the enhanced PL due to increased Mo-O bonding leads to p-type compensation doping, and is accompanied by a 2x degradation in transport properties compared to MoS2 grown on c-plane sapphire. This work provides a foundation for understanding the link between photonic and electronic performance of 2D semiconducting layers, and demonstrates that they are not always correlated.
机译:评估和调整二维(2D)材料的属性是推进2D科学技术的主要重点。尽管许多人声称2D层的光子特性提供了该材料“高质量”的证据,但对于电子性能而言可能并非如此。在这项工作中,我们对合成的单层二硫化钼的光子和电子响应进行反卷积。我们证明增强的光致发光可以通过适当选择衬底来进行稳健的设计,与传统上生长的MoS2相比,MoS2在r面蓝宝石上的生长可以增加PL和载流子寿命的100倍以上的提高,这是因为钼和氧的键合增加了C面蓝宝石。光学性能的这些显着增强与超酸处理过的MoS2相似,表明MoS2的电子性能也优越。但是,电荷传输特性的直接比较表明,由于Mo-O键的增加而导致的PL增强导致p型补偿掺杂,并且与在c面蓝宝石上生长的MoS2相比,传输特性下降了2倍。这项工作为理解二维半导体层的光子和电子性能之间的联系提供了基础,并证明了它们并不总是相关的。

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