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Edge currents shunt the insulating bulk in gapped graphene

机译:边缘电流使带间隙的石墨烯中的绝缘块分流

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摘要

An energy gap can be opened in the spectrum of graphene reaching values as large as 0.2 eV in the case of bilayers. However, such gaps rarely lead to the highly insulating state expected at low temperatures. This long-standing puzzle is usually explained by charge inhomogeneity. Here we revisit the issue by investigating proximity-induced superconductivity in gapped graphene and comparing normal-state measurements in the Hall bar and Corbino geometries. We find that the supercurrent at the charge neutrality point in gapped graphene propagates along narrow channels near the edges. This observation is corroborated by using the edgeless Corbino geometry in which case resistivity at the neutrality point increases exponentially with increasing the gap, as expected for an ordinary semiconductor. In contrast, resistivity in the Hall bar geometry saturates to values of about a few resistance quanta. We attribute the metallic-like edge conductance to a nontrivial topology of gapped Dirac spectra.
机译:对于双层,可以在石墨烯的光谱中打开一个能隙,达到0.2 eV。但是,这样的间隙很少导致低温下期望的高度绝缘状态。这个长期存在的难题通常可以通过电荷不均匀性来解释。在这里,我们通过研究间隙石墨烯中邻近感应的超导性并比较霍尔棒和Corbino几何结构中的常态测量值来重新讨论该问题。我们发现,带隙石墨烯中电荷中性点的超电流沿着边缘附近的狭窄通道传播。通过使用无边缘的Corbino几何结构可以证实这一发现,在这种情况下,中性点的电阻率会随着间隙的增加而呈指数增长,这是普通半导体所期望的。相反,霍尔棒几何形状的电阻率饱和到大约几个电阻量子的值。我们将类似金属的边缘电导归因于带隙狄拉克光谱的非平凡拓扑。

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